SYNTHESIS OF GRAPHENE VIA CHEMICAL VAPOUR DEPOSITION ON COPPER SUBSTRATES WITH DIFFERENT THICKNESSES

Year 2017, Volume: 18 Issue: 2, 289 - 300, 30.06.2017

Mücahit Yılmaz , Yasin Ramazan Eker

https://doi.org/10.18038/aubtda.279709

Cited By: 2

Abstract

The
quality of the grown graphene on the top side and subside of copper
substrate with different thicknesses was investigated. Graphenes were
grown on the 9, 25, 150 and 250 μm
thickness copper substrates with Low-Pressure CVD using CH₄
process gas.
Copper subtrates were investigated with XRD, XRF. Graphenes which
grown on both surface of the copper substrate were characterized with
Raman spectrometry. Results show that the grain size which calculated
from XRD data is decreasing with increasing thickness except for 25
μm thick copper. Besides the micro-strain in the structure is
increasing with thickness of substrate. Raman results show that the
graphene grown on the top surface of the 9 μm thick substrate is
purely single-layer. The other samples consist of not only
single-layer graphene but also few-layer graphene domains. When we
look at I_2D/I_G
ratios for samples on the top surface of coppers, the graphene doping
decreases with increasing of thickness of substrate. At the same
time, Graphenes on the copper subsurface have blueshift and higher
FWMH values. It reveals that a tight relation between the graphene
and the copper subsurface. The graphene grown on the top side of the
150 μm copper has the typical attribute of suspended single-layer
graphene with the redshift of a narrow 2D peak and I_2D/I_G
≈ 4. In this study, the best sample is obtained on the top surface
of the 9 μm thick copper substrate. The large single-layer graphene
is depend on microstrain rather than grain orientation.

Keywords

Single-layer graphene, CVD graphene growth, Copper Substrate

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