GROWTH OF InSe and InSe:Zn SEMICONDUCTORS BY BRIDGMAN/STOCKBARGER TECHNIQUE and STRUCTURAL CHARACTERIZATIONS

Year 2015, Issue: 2015 Özel Sayısı, 77 - 94, 15.01.2016

Bekir Gürbulak , Songül Duman Salih Zeki Erzenoğlu Mehmet Şata Afsoun Ashkhasi Mutlu Kundakçı Muhammet Aksoy Muhammet Yıldırım

Abstract

Rapid
increase in the world population day by day due to the decrease in oil reserves
and climate change, identification of environmentally friendly sources of
energy is emerging as one of the priority issues.  The importance of semiconductors paving the
way for nano and optoelectronic technology has recently been increasing. But,
producing them easily and having their vast application fields are most
important. For that reason, the crystals having wide application field and
their characteristics which are determinated are needed. The characteristics of
these crystals which are important fort the nano and optoelecronic technology
will be explored in detail by analyzing the all obtained results. InSe and
InSe:Zn binary semiconductor compounds were grown in our crystal growth
laboratory by the Bridgman-Stockbarger method. The structural and morphological
characterizations of the samples were carried out by X-ray diffraction (XRD),
Scanning Electron Microscopy (SEM) and Energy-dispersive X-ray spectroscopy
(EDX) techniques. The XRD results indicated that the grown films had hexzagonal
structure and Zn doping
increased the peak intensities. The lattice parameters were calculated to be a=b=
4.002 Å, c = 17.160 Å for InSe and a=b= 5.845 Å ve c = 16.788 Å for (0012)
InSe:Zn using the XRD results.From the SEM results, it was observed that the average grain size values
for InSe and InSe:Zn were between 42-155 nm and 50-125 nm, respectively. EDX results showed that In and Se
elements were in weight 57.04%
and 38.46% in the
structure.

Keywords

InSe, InSe:Zn, Brigdman/Stockbarger Technique, XRD, SEM, EDX

InSe ve InSe:Zn YARIİLETKENLERİN BRIDGMAN/STOCKBARGER TEKNİĞİYLE BÜYÜTÜLMESİ ve YAPISAL KARAKTERİZASYONU

Abstract

 Dünya
nüfusunun hızla artması, petrol rezervlerinin gün geçtikçe azalması ve iklim
değişikliklerinden dolayı, çevre dostu enerji kaynaklarının belirlenmesi
öncelikli konulardan birisi olarak ortaya çıkmaktadır.
Bu maksatla, uygulama alanlarının çok olduğu ve karakteristiklerinin tam
olarak belirlendiği yarıiletkenlere ihtiyaç duyulmaktadır. A^IIIB^VI
yarıiletken kristallerin büyütülmesi ve araştırılmasıyla yarıiletken teknolojisinde
büyük ilerlemeler sağlanmıştır. Elde edilen bütün sonuçlar analiz edilerek nano
ve optoelektronik teknolojisi için önemli olan bu kristallerin
karakteristikleri detaylı olarak araştırılmıştır. InSe ve InSe:Zn ikili
yarıiletken bileşikleri, bölümümüz kristal büyütme laboratuvarında,
Bridgman-Stockbarger metodu ile büyütülmüştür. Numunelerin, yapısal ve
morfolojik karakterizasyonları X-ışını kırınımı (XRD), taramalı Elektron
Mikroskobu (SEM) ve Enerji ayrımlı
X-ışını spektroskopisi (EDX) teknikleri kullanılarak
gerçekleştirilmiştir. XRD sonuçları, büyütülen numunelerin hekzagonal
kristal yapıya sahip olduklarını ve Zn katkılamanın pik şiddetlerini
artırdığını göstermiştir. XRD sonuçları kullanılarak, örgü  parametreleri InSe için a
=b= 4.002 Å, c = 17.160 Å ve InSe:Zn (0012) için ise a=b=5.845
Å ve c=16,788 Å olarak hesaplanmıştır. SEM sonuçlarından, ortalama
tanecik büyüklüğünün sırasıyla, InSe için 42-155 nm ve InSe:Zn için 50-125 nm
aralığında olduğu bulunmuştur. EDX sonuçları, In ve Se
elementlerinin ağırlıkça %57.04 ve %38.46 olarak yapıda yer aldığını
göstermiştir. 

Keywords

InSe, InSe:Zn, Brigdman/Stockbarger Tekniği, XRD, SEM, EDX

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