Research Article
BibTex RIS Cite

A Simple Test for Non-ideal Memristors

Year 2019, Volume: 2 Issue: 1, 1 - 5, 18.07.2019

Abstract

Semiconductor components must be tested before
their usage. The test for a diode is well-known. Memristor is a nonlinear
circuit element, whose existence has been predicted in 1971 and a memristive
system behaving as memristor has been found in 2008. It is actually a nonlinear
resistor with charge-dependency. In recent years, memristor has become an
important research area. In addition to ideal memristors, memristive systems
are nowadays also called memristors. However, memristor is not entirely known
as a circuit element and there is still research undergoing to model it.
Memristor has different models used in literature, such as linear dopant drift
models, nonlinear dopant drift models, and threshold-based models. If memristor
would become commercially available and start being commonly used in circuits,
it will also need testing methods to be used by circuit designers. In this
paper, by reviewing some of the memristor models given in literature, a simple
test is suggested to be applied for individual memristors.   

References

  • [1] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, ”The missing memristor found,” Nature (London), Vol. 453, pp. 80-83, 2008.
  • [2] Vongehr, Sascha, and Xiangkang Meng. "The missing memristor has not been found." Scientific reports 5 (2015).
  • [3] L. O. Chua,” Memristor - The Missing Circuit Element,” IEEE Trans.Circuit Theory, Vol. 18, pp. 507-519, 1971.
  • [4] L. O. Chua and S. M. Kang,” Memrisive devices and systems,” Proc.IEEE, Vol. 64, pp. 209-223, 1976.
  • [5] Prodromakis, T., and C. Toumazou. "A review on memristive devices and applications." 2010 17th IEEE International Conference on Electronics, Circuits and Systems.
  • [6] Pershin, Yu V., J. Martinez-Rincon, and M. Di Ventra. "Memory circuit elements: from systems to applications." Journal of Computational and Theoretical Nanoscience 8.3 (2011): 441-448.
  • [7] Y. V. Pershin and M. Di Ventra, “Memory effects in complex materials and nanoscale systems,” Adv. Phys., vol. 60, pp. 145–227, Apr. 01, 2011, 2011.
  • [8] L. Chua, “Resistance switching memories are memristors,” Appl. Phys. A, vol. 102, pp. 765–783, Mar. 01, 2011, 2011.
  • [9] Marani, Roberto, Gennaro Gelao, and Anna Gina Perri. "A Review on Memristor Applications" International Journal of Advances in Engineering & Technology 8.3 (2015): 294.
  • [10] Shin, Sangho, Kyungmin Kim, and Sung-Mo Kang. "Memristor applications for programmable analog ICs." IEEE Transactions on Nanotechnology 10.2 (2011): 266-274.
  • [11] Fouda, Mohamed E., and Ahmed G. Radwan. "Memristor‐based voltage‐controlled relaxation oscillators." International Journal of Circuit Theory and Applications 42.10 (2014): 1092-1102.
  • [12] Pershin, Y. V., and M. Di Ventra. "A simple test for ideal memristors." Journal of Physics D: Applied Physics, Volume 52, Number 1, 2018.
  • [13] Biolek, Zdeněk, Dalibor Biolek, and Viera Biolkova. "SPICE Model of Memristor with Nonlinear Dopant Drift." Radioengineering 18.2 (2009).
  • [14] Joglekar, Yogesh N., and Stephen J. Wolf. "The elusive memristor: properties of basic electrical circuits." European Journal of Physics 30.4 (2009): 661.
  • [15] Prodromakis, Themistoklis, et al. "A versatile memristor model with nonlinear dopant kinetics." IEEE transactions on electron devices 58.9 (2011): 3099-3105.
  • [16] Karakulak, E., Mutlu R., Uçar E., "Reconstructive sensing circuit for complementary resistive switches-based crossbar memories." Turkish Journal of Electrical Engineering & Computer Sciences 24.3 (2016): 1371-1383.
  • [17] Mutlu R., and Karakulak E. "A methodology for memristance calculation." Turkish Journal of Electrical Engineering & Computer Sciences 22.1 (2014): 121-131.
  • [18] F.Z. Wang, N. Helian, S. Wu, M.G. Lim, Y. Guo, M.A. Parker, “Delayed switching in memristors and memristive systems”, Electron Device Letters, Vol. 31, pp. 755–757, 2010.
  • [19] R. Mutlu, E. Karakulak, “Emulator circuit of Ti02 memristor with linear dopant drift made using analog multiplier", National Conference on Electrical, Electronics and Computer Engineering, pp. 380-384, 2010.

Yüksek Roff/Ron Oranlı Memristörler İçin Bir Test Yöntemi

Year 2019, Volume: 2 Issue: 1, 1 - 5, 18.07.2019

Abstract

Yarı iletken elektronik elemanlar kullanımlarından önce test
edilmelidirler. Memristörler varlığı 1971 yılında ortaya atılmış olan doğrusal
olmayan elemanlardır ve bir memristif sistem 2008 yılında bulunmuştur.
Memristörler son yıllarda önemli bir araştırma alanına dönüşmüştür. Ayrıca
memristörlere ilave olarak memristif sistemler de memristör olarak
adlandırılmaktadır. Literatürde memristörlere ait lineer iyon sürüklenme hızlı,
doğrusal olmayan iyon sürüklenme hızlı ve eşik voltajlı olmak üzere çok sayıda model
bulunmaktadır. Bir gün memristörler ticari olarak satıldığında devre
tasarımcılarının bir memristör test yöntemine ihtiyaç olacaktır. Bu makalede
öncelikle çeşitli memristör modelleri incelenmiş ve yüksek
ROFF/RON oranına sahip memristörler için bir test yöntemi verilmiştir. Bu test sadece
bir multimetre ya da ohmmetre kullanılarak yapılabilmekte ve ölçülen
memristörün sağlam ya da bozuk olduğunu göstermektedir.

References

  • [1] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, ”The missing memristor found,” Nature (London), Vol. 453, pp. 80-83, 2008.
  • [2] Vongehr, Sascha, and Xiangkang Meng. "The missing memristor has not been found." Scientific reports 5 (2015).
  • [3] L. O. Chua,” Memristor - The Missing Circuit Element,” IEEE Trans.Circuit Theory, Vol. 18, pp. 507-519, 1971.
  • [4] L. O. Chua and S. M. Kang,” Memrisive devices and systems,” Proc.IEEE, Vol. 64, pp. 209-223, 1976.
  • [5] Prodromakis, T., and C. Toumazou. "A review on memristive devices and applications." 2010 17th IEEE International Conference on Electronics, Circuits and Systems.
  • [6] Pershin, Yu V., J. Martinez-Rincon, and M. Di Ventra. "Memory circuit elements: from systems to applications." Journal of Computational and Theoretical Nanoscience 8.3 (2011): 441-448.
  • [7] Y. V. Pershin and M. Di Ventra, “Memory effects in complex materials and nanoscale systems,” Adv. Phys., vol. 60, pp. 145–227, Apr. 01, 2011, 2011.
  • [8] L. Chua, “Resistance switching memories are memristors,” Appl. Phys. A, vol. 102, pp. 765–783, Mar. 01, 2011, 2011.
  • [9] Marani, Roberto, Gennaro Gelao, and Anna Gina Perri. "A Review on Memristor Applications" International Journal of Advances in Engineering & Technology 8.3 (2015): 294.
  • [10] Shin, Sangho, Kyungmin Kim, and Sung-Mo Kang. "Memristor applications for programmable analog ICs." IEEE Transactions on Nanotechnology 10.2 (2011): 266-274.
  • [11] Fouda, Mohamed E., and Ahmed G. Radwan. "Memristor‐based voltage‐controlled relaxation oscillators." International Journal of Circuit Theory and Applications 42.10 (2014): 1092-1102.
  • [12] Pershin, Y. V., and M. Di Ventra. "A simple test for ideal memristors." Journal of Physics D: Applied Physics, Volume 52, Number 1, 2018.
  • [13] Biolek, Zdeněk, Dalibor Biolek, and Viera Biolkova. "SPICE Model of Memristor with Nonlinear Dopant Drift." Radioengineering 18.2 (2009).
  • [14] Joglekar, Yogesh N., and Stephen J. Wolf. "The elusive memristor: properties of basic electrical circuits." European Journal of Physics 30.4 (2009): 661.
  • [15] Prodromakis, Themistoklis, et al. "A versatile memristor model with nonlinear dopant kinetics." IEEE transactions on electron devices 58.9 (2011): 3099-3105.
  • [16] Karakulak, E., Mutlu R., Uçar E., "Reconstructive sensing circuit for complementary resistive switches-based crossbar memories." Turkish Journal of Electrical Engineering & Computer Sciences 24.3 (2016): 1371-1383.
  • [17] Mutlu R., and Karakulak E. "A methodology for memristance calculation." Turkish Journal of Electrical Engineering & Computer Sciences 22.1 (2014): 121-131.
  • [18] F.Z. Wang, N. Helian, S. Wu, M.G. Lim, Y. Guo, M.A. Parker, “Delayed switching in memristors and memristive systems”, Electron Device Letters, Vol. 31, pp. 755–757, 2010.
  • [19] R. Mutlu, E. Karakulak, “Emulator circuit of Ti02 memristor with linear dopant drift made using analog multiplier", National Conference on Electrical, Electronics and Computer Engineering, pp. 380-384, 2010.
There are 19 citations in total.

Details

Primary Language English
Subjects Engineering
Journal Section Research Articles
Authors

Reşat Mutlu 0000-0003-0030-7136

Ertuğrul Karakulak 0000-0001-5937-2114

Publication Date July 18, 2019
Submission Date March 24, 2019
Published in Issue Year 2019 Volume: 2 Issue: 1