FLG/InP Schottky Kontaklarının Elektronik Özellikleri

Year 2023, Issue: 49, 6 - 11, 31.03.2023

Fulya Esra Cimilli Çatır , Murat Gülnahar

https://doi.org/10.31590/ejosat.1265636

Abstract

Grafen (Gr), yeni elektronik, fotonik ve kompozit malzemelerin geliştirilmesinde büyük ilgi görmektedir. Gr'nin fiziksel özellikleri katman sayısına bağlı olarak değişebilmekte ve bu benzersiz özelliği onu farklı elektronik uygulamalar için potansiyel bir malzeme yapmaktadır. Bu çalışmada InP yarı iletken yüzeyi üzerine birkaç katmanlı grafen (FLG) filmi döndürerek kaplandı ve FLG/n-InP Schottky kontakları üretildi. FLG nano filminin özellikleri ve kalitesi Raman spektroskopisi kullanılarak belirlendi. Schottky kontaklarının idealite faktörü, bariyer yüksekliği ve seri direnci gibi parametreler akım-gerilim (I-V) eğrileri kullanılarak hesaplandı. Gauss dağılımı ile Gr/InP kontaklarının ortalama idealite faktörü =1,47, ortalama engel yüksekliği değerleri ise <φb>=0,68 eV olarak bulundu. Standart sapma değerleri idealite faktörü için σ=0,32 ve engel yüksekliği için σ=0,06 eV olarak hesaplanmıştır. Ayrıca Cheung fonksiyonlarından seri direnç değerleri hesaplanmış ve literatür ile uyumlu bulunmuştur. Son olarak logaritmik I-V karakteristikleri incelenerek Gr/n-InP yapısının akım iletim mekanizmaları ortaya konulmuştur.

Keywords

Grafen, Gauss dağılımı, InP, Raman spektrumu

Electronic Properties of FLG/InP Schottky Contacts

Abstract

Graphene (Gr) is of great interest in the development of new electronic, photonic, and composite materials. The physical properties of Gr can vary depending on the number of layers, and this unique property makes it a potential material for different electronic applications. In this study, few-layer graphene (FLG) film was spin-coated onto the InP semiconductor surface and the FLG/n-InP Schottky contact was produced. The properties and quality of the FLG nano-film were determined by using Raman spectroscopy. Parameters such as ideality factor, barrier height, and series resistance of Schottky contacts were calculated using current-voltage (I-V) curves. With the Gaussian distribution, the mean ideality factor of the Gr/InP contacts was found to be =1,47, and the mean barrier height values were found to be <φb>=0.68 eV. The standard deviation values were calculated as σ=0.32 for the ideality factor and σ=0.06 eV for the barrier height. In addition, the series resistance values were calculated from the Cheung functions and were found to be in agreement with the literature. Finally, the current conduction mechanisms of the Gr/n-InP structure were revealed by examining the logarithmic I-V characteristics.

Keywords

Graphene, Gaussian distribution, InP, Raman spectrum

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