Research Article
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INFLUENCE OF HEATING RATE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF SILVER AND GERMANIUM CO-DOPED CZTS THIN FILM

Year 2023, Volume: 4 Issue: 1, 10 - 15, 15.06.2023
https://doi.org/10.55696/ejset.1295349

Abstract

The effect of heating rate on the structural and optical properties of Ag+Ge co-doped CZTS thin film were investigated and compared with the undoped CZTS sample. The undoped and Ag+Ge co-doped CZTS samples obtained by two-stage technique consisting of the sequential deposition of the precursor stacks by sputtering systemand sulfurization of these layers at elevated temperature in the RTP system by employing heating rate of 1°C/s, 2°C/s and 3°C/s. Ag and Ge co-doped precursor stack as well as undoped stack demonstrated Cu-poor, Zn-rich composition. In addition, the dopant ratio of the Ag+Ge co-doped stack was close to the targeted content considering to EDS measurement. Regardless of the employed heating rate or the doping process, all of the samples crystallized in a kesterite structure. However, it was confirmed by XRD measurements that high heating rates caused phase separation in kesterite phase formation. On the other hand, The Raman peaks assigned to Cu-vacancy and CuZn antisite defects formation inhibited with incorporating Ag and Ge into the CZTS structure. Ag and Ge co-doped CZTS sample produced with a heating ramp rate of 1°C/s showed better structural and optical results among them.

Supporting Institution

Scientific Research Projects Unit of Niğde Ömer Halisdemir University

Project Number

FMT 2022/6-BAGEP

Thanks

This work was supported by grants from Scientific Research Projects Unit of Niğde Ömer Halisdemir University (FMT 2022/6-BAGEP). The authors also thanks to Prof. Dr. RECEP ZAN for his valuable support.

References

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  • K. Ito, Copper zinc tin sulfide-based thin-film solar cells. John Wiley & Sons, 2014.
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  • Y. E. Romanyuk et al., "Doping and alloying of kesterites," Journal of Physics: Energy, vol. 1, no. 4, p. 044004, 2019.
  • S. G. Haass, M. Diethelm, M. Werner, B. Bissig, Y. E. Romanyuk, and A. N. Tiwari, "11.2% efficient solution processed kesterite solar cell with a low voltage deficit," Advanced Energy Materials, vol. 5, no. 18, p. 1500712, 2015.
  • S. Giraldo et al., "Cu2ZnSnSe4 solar cells with 10.6% efficiency through innovative absorber engineering with Ge superficial nanolayer," Progress in Photovoltaics: Research and Applications, vol. 24, no. 10, pp. 1359-1367, 2016.
  • S. Yang et al., "The impact of different Ag/(Ag+ Cu) ratios on the properties of (Cu 1− x Ag x) 2 ZnSnS 4 thin films," Journal of Materials Science: Materials in Electronics, vol. 30, pp. 11171-11180, 2019.
  • Y. Atasoy, "Effect of annealing temperature on the microstructural and optical properties of newly developed (Ag, Cu) 2Zn (Sn, Ge) Se4 thin films," Applied Physics A, vol. 128, no. 11, p. 1030, 2022.
  • L. Qiu, J. Xu, and X. Tian, "Fabrication of Ag and Mn co-doped Cu2ZnSnS4 thin film," Nanomaterials, vol. 9, no. 11, p. 1520, 2019.
  • X. Zhao et al., "Lithium-assisted synergistic engineering of charge transport both in GBs and GI for Ag-substituted Cu2ZnSn (S, Se) 4 solar cells," Journal of Energy Chemistry, vol. 50, pp. 9-15, 2020.
  • A. Yagmyrov, S. Erkan, B. Başol, R. Zan, and M. Olgar, "Impact of the ZnS layer position in a stacked precursor film on the properties of CZTS films grown on flexible molybdenum substrates," Optical Materials, vol. 136, p. 113423, 2023.
  • A. Fairbrother et al., "Precursor stack ordering effects in Cu2ZnSnSe4 thin films prepared by rapid thermal processing," The Journal of Physical Chemistry C, vol. 118, no. 31, pp. 17291-17298, 2014.
  • M. Olgar, A. Sarp, A. Seyhan, and R. Zan, "Impact of stacking order and annealing temperature on properties of CZTS thin films and solar cell performance," Renewable Energy, vol. 179, pp. 1865-1874, 2021.
  • S. Y. Chen, X. G. Gong, A. Walsh, and S. H. Wei, "Defect physics of the kesterite thin-film solar cell absorber Cu2ZnSnS4," (in English), Appl Phys Lett, vol. 96, no. 2, p. 021902, Jan 11 2010, doi: Artn 02190210.1063/1.3275796.
  • A. R. Denton and N. W. Ashcroft, "Vegard’s law," Phys. Rev. A, vol. 43, no. 6, p. 3161, 1991.
  • N. Saini, J. K. Larsen, K. V. Sopiha, J. Keller, N. Ross, and C. Platzer-Björkman, "Germanium incorporation in Cu2ZnSnS4 and formation of a Sn–Ge gradient," physica status solidi (a), vol. 216, no. 22, p. 1900492, 2019.
  • H. Cui, X. Liu, F. Liu, X. Hao, N. Song, and C. Yan, "Boosting Cu2ZnSnS4 solar cells efficiency by a thin Ag intermediate layer between absorber and back contact," Appl Phys Lett, vol. 104, no. 4, p. 041115, 2014.
  • M. Y. Valakh et al., "Raman scattering and disorder effect in Cu2ZnSnS4," physica status solidi (RRL)–Rapid Research Letters, vol. 7, no. 4, pp. 258-261, 2013.
  • S. Yazici et al., "Growth of Cu2ZnSnS4 absorber layer on flexible metallic substrates for thin film solar cell applications," (in English), Thin Solid Films, vol. 589, pp. 563-573, Aug 31 2015, doi: 10.1016/j.tsf.2015.06.028.
  • M. Olgar, A. Seyhan, A. Sarp, and R. Zan, "The choice of Zn or ZnS layer in the stacked precursors for preparation of Cu2ZnSnS4 (CZTS) thin films," Superlattices and Microstructures, vol. 146, p. 106669, 2020.
  • J. J. Scragg, L. Choubrac, A. Lafond, T. Ericson, and C. Platzer-Björkman, "A low-temperature order-disorder transition in Cu2ZnSnS4 thin films," Applied Physics Letters, vol. 104, no. 4, p. 041911, 2014.
  • H. D. Shelke, A. C. Lokhande, V. S. Raut, A. M. Patil, J. H. Kim, and C. D. Lokhande, "Facile synthesis of Cu 2 SnS 3 thin films grown by SILAR method: effect of film thickness," Journal of Materials Science: Materials in Electronics, vol. 28, pp. 7912-7921, 2017.
  • J. Tauc, "Optical properties and electronic structure of amorphous Ge and Si," Mater. Res. Bull., vol. 3, no. 1, pp. 37-46, 1968.
  • B. A. Schubert et al., "Cu2ZnSnS4 thin film solar cells by fast coevaporation," Progress in Photovoltaics: Research and Applications, vol. 19, no. 1, pp. 93-96, 2011.
Year 2023, Volume: 4 Issue: 1, 10 - 15, 15.06.2023
https://doi.org/10.55696/ejset.1295349

Abstract

Project Number

FMT 2022/6-BAGEP

References

  • K. Jimbo et al., "Cu2ZnSnS4-type thin film solar cells using abundant materials," Thin solid films, vol. 515, no. 15, pp. 5997-5999, 2007.
  • K. Ito, Copper zinc tin sulfide-based thin-film solar cells. John Wiley & Sons, 2014.
  • M. A. Green et al., "Solar cell efficiency tables (Version 61)," Progress in Photovoltaics: Research and Applications, 2023.
  • W. Shockley and H. J. Queisser, "Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells," (in English), J. Appl. Phys., vol. 32, no. 3, pp. 510-519, 1961, doi: 10.1063/1.1736034.
  • Y. E. Romanyuk et al., "Doping and alloying of kesterites," Journal of Physics: Energy, vol. 1, no. 4, p. 044004, 2019.
  • S. G. Haass, M. Diethelm, M. Werner, B. Bissig, Y. E. Romanyuk, and A. N. Tiwari, "11.2% efficient solution processed kesterite solar cell with a low voltage deficit," Advanced Energy Materials, vol. 5, no. 18, p. 1500712, 2015.
  • S. Giraldo et al., "Cu2ZnSnSe4 solar cells with 10.6% efficiency through innovative absorber engineering with Ge superficial nanolayer," Progress in Photovoltaics: Research and Applications, vol. 24, no. 10, pp. 1359-1367, 2016.
  • S. Yang et al., "The impact of different Ag/(Ag+ Cu) ratios on the properties of (Cu 1− x Ag x) 2 ZnSnS 4 thin films," Journal of Materials Science: Materials in Electronics, vol. 30, pp. 11171-11180, 2019.
  • Y. Atasoy, "Effect of annealing temperature on the microstructural and optical properties of newly developed (Ag, Cu) 2Zn (Sn, Ge) Se4 thin films," Applied Physics A, vol. 128, no. 11, p. 1030, 2022.
  • L. Qiu, J. Xu, and X. Tian, "Fabrication of Ag and Mn co-doped Cu2ZnSnS4 thin film," Nanomaterials, vol. 9, no. 11, p. 1520, 2019.
  • X. Zhao et al., "Lithium-assisted synergistic engineering of charge transport both in GBs and GI for Ag-substituted Cu2ZnSn (S, Se) 4 solar cells," Journal of Energy Chemistry, vol. 50, pp. 9-15, 2020.
  • A. Yagmyrov, S. Erkan, B. Başol, R. Zan, and M. Olgar, "Impact of the ZnS layer position in a stacked precursor film on the properties of CZTS films grown on flexible molybdenum substrates," Optical Materials, vol. 136, p. 113423, 2023.
  • A. Fairbrother et al., "Precursor stack ordering effects in Cu2ZnSnSe4 thin films prepared by rapid thermal processing," The Journal of Physical Chemistry C, vol. 118, no. 31, pp. 17291-17298, 2014.
  • M. Olgar, A. Sarp, A. Seyhan, and R. Zan, "Impact of stacking order and annealing temperature on properties of CZTS thin films and solar cell performance," Renewable Energy, vol. 179, pp. 1865-1874, 2021.
  • S. Y. Chen, X. G. Gong, A. Walsh, and S. H. Wei, "Defect physics of the kesterite thin-film solar cell absorber Cu2ZnSnS4," (in English), Appl Phys Lett, vol. 96, no. 2, p. 021902, Jan 11 2010, doi: Artn 02190210.1063/1.3275796.
  • A. R. Denton and N. W. Ashcroft, "Vegard’s law," Phys. Rev. A, vol. 43, no. 6, p. 3161, 1991.
  • N. Saini, J. K. Larsen, K. V. Sopiha, J. Keller, N. Ross, and C. Platzer-Björkman, "Germanium incorporation in Cu2ZnSnS4 and formation of a Sn–Ge gradient," physica status solidi (a), vol. 216, no. 22, p. 1900492, 2019.
  • H. Cui, X. Liu, F. Liu, X. Hao, N. Song, and C. Yan, "Boosting Cu2ZnSnS4 solar cells efficiency by a thin Ag intermediate layer between absorber and back contact," Appl Phys Lett, vol. 104, no. 4, p. 041115, 2014.
  • M. Y. Valakh et al., "Raman scattering and disorder effect in Cu2ZnSnS4," physica status solidi (RRL)–Rapid Research Letters, vol. 7, no. 4, pp. 258-261, 2013.
  • S. Yazici et al., "Growth of Cu2ZnSnS4 absorber layer on flexible metallic substrates for thin film solar cell applications," (in English), Thin Solid Films, vol. 589, pp. 563-573, Aug 31 2015, doi: 10.1016/j.tsf.2015.06.028.
  • M. Olgar, A. Seyhan, A. Sarp, and R. Zan, "The choice of Zn or ZnS layer in the stacked precursors for preparation of Cu2ZnSnS4 (CZTS) thin films," Superlattices and Microstructures, vol. 146, p. 106669, 2020.
  • J. J. Scragg, L. Choubrac, A. Lafond, T. Ericson, and C. Platzer-Björkman, "A low-temperature order-disorder transition in Cu2ZnSnS4 thin films," Applied Physics Letters, vol. 104, no. 4, p. 041911, 2014.
  • H. D. Shelke, A. C. Lokhande, V. S. Raut, A. M. Patil, J. H. Kim, and C. D. Lokhande, "Facile synthesis of Cu 2 SnS 3 thin films grown by SILAR method: effect of film thickness," Journal of Materials Science: Materials in Electronics, vol. 28, pp. 7912-7921, 2017.
  • J. Tauc, "Optical properties and electronic structure of amorphous Ge and Si," Mater. Res. Bull., vol. 3, no. 1, pp. 37-46, 1968.
  • B. A. Schubert et al., "Cu2ZnSnS4 thin film solar cells by fast coevaporation," Progress in Photovoltaics: Research and Applications, vol. 19, no. 1, pp. 93-96, 2011.
There are 25 citations in total.

Details

Primary Language English
Subjects Classical Physics (Other)
Journal Section Research Articles
Authors

Yavuz Atasoy 0000-0002-6382-992X

Ali Çiriş 0000-0003-4266-2080

Mehmet Ali Olğar 0000-0002-6359-8316

Project Number FMT 2022/6-BAGEP
Publication Date June 15, 2023
Published in Issue Year 2023 Volume: 4 Issue: 1

Cite

IEEE Y. Atasoy, A. Çiriş, and M. A. Olğar, “INFLUENCE OF HEATING RATE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF SILVER AND GERMANIUM CO-DOPED CZTS THIN FILM”, (EJSET), vol. 4, no. 1, pp. 10–15, 2023, doi: 10.55696/ejset.1295349.