Investigation of Characreristics Parameters Obtained fromCurrent-Voltage and Capacity- Voltage Measurements of Cu/n-InP/In Schottky Barrier Diodes

Year 2018, Volume: 11 Issue: 3, 381 - 393, 30.12.2018

Fulya Esra Cimilli Çatır

https://doi.org/10.18185/erzifbed.376279

Cited By: 2

Abstract

The
Schottky barrier diodes were prepared using n-type InP (100) wafer. The ohmic
contact was made by evaporating In and annealing at 320^oC under N₂
atmosphere. The Schottky contacts with 0,5 mm diameter were formed on the front
face of sample. The I–V characteristics of the devices were measured in the
temperature range of 20K and 300K. The I–V characteristics of Cu/n-type InP
Schottky diodes were obtained as a function of temperature. The experimental
I–V characteristics of the Cu/n-type InP Schottky diodes are in a good
agreement with the traditional thermionic emission (TE) theory. The
capacitance-voltage (C-V) characteristics of the Cu/n-type InP Schottky diodes
have been measured between 300-10 K with 10K steps at 1 MHz frequency.
Depending on sample temperature, the change of the electrical characterization
of the device has been examined. The temperature dependent barrier
characteristics of Cu/n-Type InP Schottky diodes are in a good agreement with
“barrier inhomogeneous model” of Schottky contacts. In temperatures between
20-150 K and 150-300 K, show a double slope structure in a harmony of “The
double Gaussian model” of Schottky contacts. In addition, the characteristic
parameters as series resistance, carrier concentration, diffusion potential and
Fermi energy values are calculated from temperature dependent I-V and C-V
characteristics.

Keywords

Double Gaussian Model, Ideality Factor, Inhomogeneous Barrier Height, Schottky Diode, Series Resistance

Cu/n-InP/In Schottky Diyotların Sıcaklığa Bağlı Akım-Voltaj ve Kapasite-Voltaj Ölçümlerinden Elde Edilen Karakteristik Parametrelerinin İncelenmesi

Abstract

Schottky
engel diyotları n-tipi InP (100) yarıiletkeni kullanılarak elde edildi. Ohmik
kontaklar In metali buharlaştırıldıktan sonra 320^oC’de ve N₂
ortamında tavlanarak yapıldı. Schottky kontakları 0,5 mm çapında ve
yarıiletkenin ön yüzünde imal edildi. I–V karakteristikleri 20K ve 300K
sıcaklık aralığında sıcaklığın bir fonksiyonu olarak ölçüldü. Deneysel I–V
karakteristiklerinin Cu/n-tipi Inp Schottky diyotları için geleneksel
Termiyonik Emisyon (TE) teorisi ile uyum içerisinde olduğu gözlemlendi.
Cu/n-tipi InP Schottky diyotlarının kapasite-gerilim (C-V) ölçümleri 300-10 K
sıcaklık aralığında ve 10K adımlarla 1 MHz frekansta alındı. Numune sıcaklığına
bağlı olarak diyotlarımızın elektriksel karakterizasyonunda değişikliklerin
olduğu tespit edildi. Cu/n-InP/In Schottky kontakların sıcaklığa bağlı engel
karakteristiklerinin “engel inhomojenliği modeline” uyduğu belirlendi. 20-150 K
ve 150-300 K sıcaklık aralığında Schottky diyotlara iki farklı ortalama engel
yüksekliğinin eşlik etmesi engel yüksekliğinin çift Gaussian modeli ile uyum
içerisindedir. Ayrıca sıcaklığa bağlı I-V ve C-V karakteristiklerinden seri
direnç, taşıyıcı konsantrasyonu, difüzyon potansiyeli ve Fermi enerjisi gibi
parametreleri de hesaplandı.

Keywords

Çift Gaussian Modeli, İdealite Faktörü, İnhomojen Engel Yüksekliği, Schottky Diyot, Seri Direnç

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