Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors

Year 2021, Volume: 14 Issue: 2, 825 - 836, 31.08.2021

Merve Acar , Mehmet Ertugrul

https://doi.org/10.18185/erzifbed.923845

Cited By: 1

Abstract

Bu çalışmada ağırlıklı olarak güncel çift-kutuplu alan etkili transistör üzerinde duruldu. Cift-kutup, son yıllarda birçok uygulama için önemli hale geldi. Literatürde cift-kutupa neden olan birçok faktör bildirilmiştir. Bununla birlikte, iki kutupluluğun nedenleri literatürde tam olarak araştırılmamıştır. Bu çalışmada, çift kutupluluk derecesi, WS2 FET cihazı için kanal kalınlığının bir fonksiyonu olarak belirlenmiştir. Kalınlık arttıkça çift kutupluluk derecesinin sıfıra yaklaştığı görülmüştür. Ambipolarite derecesinin sıfıra yaklaşması, WS2 kanalının doğal n-tipi davranış sergilediğini ve ambipolarite etkisinin ortadan kalktığını gösterir.

Keywords

field effect transistor, ambipolarity, TMDC

Thanks

The authors thank Prof. Dr. Emre Gür for his guidance and Soheil Mobtakeri for providing WS2 films.

TMDC Tabanlı Alan Etkili Transistörlerde Ambipolaritenin Kanal Kalınlığına Bağımlılığının Araştırılması

Abstract

Bu çalışmada ağırlıklı olarak güncel ambipolar alan etkili transistor üzerinde duruldu. Ambipolarite, son yıllarda birçok uygulama için önemli hale geldi. Literatürde ambipolariteye neden olan birçok faktör bildirilmiştir. Bununla birlikte, ambipolaritenin nedenleri literatürde tam olarak araştırılmamıştır. Bu çalışmada, ambipolarite derecesi, WS2 FET cihazı için kanal kalınlığının bir fonksiyonu olarak belirlenmiştir. Kalınlık arttıkça ambipolarite derecesinin sıfıra yaklaştığı görülmüştür. Ambipolarite derecesinin sıfıra yaklaşması, WS2 kanalının doğal n-tipi davranış sergilediğini ve ambipolarite etkisinin ortadan kalktığını gösterir.

Keywords

alan etkili transistör, ambipolarite, TMDC

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