Illumination Response of Impedance Properties of Al/Gr-PVA/p-Si (MPS) Device

Year 2023, , 89 - 96, 28.03.2023

Dilan Ata , Muzaffer Balbaşı , Adem Tataroglu

https://doi.org/10.54287/gujsa.1207057

Abstract

Admittance measurements including capacitance (C) and conductance (G) of Al/Gr-PVA/p-Si (MPS) device were made at 500 kHz and under dark and 200 mW/cm2 conditions. The illumination response on the electric characteristics of the device was investigated using the C-2-V characteristics. It was observed that the electronic parameters of the device changed depending on the illumination conditions. The doping concentration, Fermi energy and barrier height were obtained using the C-2-V data. The surface state (Nss) was also obtained using capacitance data. The results show that the device can be used as a photocapacitor.

Keywords

Gr Doped PVA, Illumination, Admittance, Basic Electrical Parameters

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