GSM VE ISM BANDI RF ENERJİ HASATLAMA SİSTEMLERİ İÇİN TEK KATLI DOĞRULTUCU DEVRE TASARIMI

Year 2021, Volume: 9 Issue: 2, 359 - 365, 20.06.2021

Aysu Belen , Mehmet Ali Belen

https://doi.org/10.21923/jesd.916164

Cited By: 1

Abstract

Kablosuz haberleşme sistemlerinin yaygınlaşmasıyla ortamlarda pek çok frekansta sinyaller bulunmaktadır. Ortamda bulunan mevcut sinyallerin enerji kaynağı olarak dönüştürülmesini hedefleyen sistemler enerji hasatlama sistemleridir. Bu sistemlerin temel kullanım amacı düşük güç tüketimine sahip haberleşme aygıtlarının pil ömürlerini uzatmaktır. Bu çalışma kapsamında 1.8GHz ile 2.5GHz Frekanslarını kapsayan geniş bandlı tek katlı RF doğrultucu devre tasarımı sunulmuştur. Kapsadığı geniş frekans bandından dolayı bu band içerisinde yer alan GSM ve ISM band uygulamalarında kullanılması uygundur. RF doğrultucu devrenin uyumlandırma katında mikroşerit interdijital kapasitör ve mikroşerit saplama yapıları kullanılmıştır. Tasarlanan devreye 0dBm giriş gücünde 1.8GHz de 100ohm yük direncinde 38mV iken 100Kohm yük direncinde 141mV ve 2.4GHz de 100ohm yük direncinde 125.6mV iken 100Kohm yük direncinde 199mV çıkış gerilimi elde edilmiştir. Doğrultucunun çıkış direnç değeri 100ohm ile 100Kohm arasında değiştirilerek, yük değeri değişiminin doğrultucu performansına etkisi incelenmiştir.

Keywords

RF Enerji Hasatlama, Kablosuz Enerji Transferi, GSM, ISM, SMS7630

SINGLE LAYER RECTIFIER CIRCUIT DESIGN FOR GSM AND ISM BAND RF ENERGY HARVESTING SYSTEMS

Abstract

With the expansion of wireless communication systems, the amount of signal in our environment are also increased. RF harvesting systems are designs that aims to harness these available energy in the environment. The main application of these systems, is to provide aid or extend the battery life of communication systems with low power consumption. Herein, design of a single stage RF harvester design with operation band of 1.8-2.5 GHz had been studied. Due to the available GSM and ISM band signals, the proposed design would have good performance results. For design of rectifier stage of RF harvester, Microstrip inter-digital capacitor and microstrip stub designs had been used. With a 0 dBm input power, the designed RF harvester had obtained output voltage of (38/141) mV with a load of 100/100K ohm and (125.6/199) mV for load of 100/100K ohm at 1.8 and 2.4 GHz respectively. The output impedance value of the RF harvester had been take taken between 100-100k ohm to evaluate the performance of the design for different load values.

Keywords

RF Energy Harversting, Wireless Energy Transfer, GSM, ISM, SMS7630

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