285 nm AlGaN-BASED DEEP-ULTRAVIOLET LED WITH HIGH INTERNAL QUANTUM EFFICIENCY: COMPUTATIONAL DESIGN

Year 2023, Issue: 052, 51 - 64, 29.03.2023

İrem Alp , Bilgehan Barış Öner , Esra Eroğlu

https://doi.org/10.59313/jsr-a.1195106

Abstract

In this paper, the systematic computational design process of AlGaN-based multiple quantum-well (QW) deep-ultraviolet (DUV) light-emitting diode (LED) grown on sapphire (Al2O3) substrate was investigated. An optimization was held to increase internal quantum efficiency (IQE) handling the LED parameters such as doping percentage of the n- and the p-type layers of these devices. The structure parameters of the best design were determined through a customized genetic algorithm integrated into the nanostructure quantum electronic simulation (nextnano). As a determining factor, IQE was obtained to be 24% for the devised 285 nm LED. It has been demonstrated that this result can be increased up to a remarkably high value of 70% by a low threading dislocation density (TDD) and reduced Auger recombination. In addition, the operation input power and potential difference were successfully kept below 0.1 W/mm2 and 5.05 V, respectively.

Keywords

Deep-ultraviolet LED, UV-C LED, Quantum efficiency, Genetic algorithm

Thanks

The nanostructure quantum electronic simulation nextnano has been employed in the first optimization step on internal quantum efficiency. We would like to thank Dr. Stefan BIRNER and the team for their understanding and contribution in using the package.

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