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Characteristics of ZnO:Er Nano Thin Films Produced Different Thickness Using Different Solvent By Sol-Gel Method

Year 2022, Volume: 25 Issue: 1, 37 - 45, 01.03.2022
https://doi.org/10.2339/politeknik.676184

Abstract

In this study, Er doped ZnO based semiconducting nano thin films are produced by the sol-gel technique using dip coating method which is widely used method for preparing nano size materials. 〖Zn〗_(1-x) 〖Er〗_x O thin films are prepared different coating thickness using different solvent. The effect of the Er doping and film thickness on structural, electric and optic properties of the ZnO semiconducting nano thin films are investigated in detail and compared with undoped sample which prepared in same conditions. X-ray diffraction analysis (XRD) has been used to determine phase and lattice parameters of the semiconducting thin films and scanning electron microscope (SEM) measurements are made for microstructure properties. The resistivity measurement for electrical properties and transmittance measurement for optic properties have been carried out.

Supporting Institution

Kastamonu Üniversitesi

Project Number

KUBAP-05/2015-12

Thanks

This study was supported by the Kastamonu University Scientific Research Projects Coordination Department under the Grant No. KUBAP-05/2015-12. Besides, we also thank the Kastamonu University Research and Application Center for the supports.

References

  • [1] Serin N., Serin T., Horzum Ş. and Çelik Y., “Annealing effects on the properties of copper oxide thin films prepared by chemical deposition”, Semiconductor Science and Technology, 20: 5, (2005).
  • [2] Sato K. and Katayama-Yoshida H., “Stabilization of Ferromagnetic States by Electron Doping in Fe-, Co- or Ni-Doped ZnO”, Japanese Journal of Applied Physica, 40:334 – 336, (2001).
  • [3] Peng Y., Huo D., He H., Li Y., Li L., Wang H., Oian Z., “Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism”, Journal of Magn. Magn. Mater., 324: 690 – 694, (2012).
  • [4] Prasad M., Sahula V. and Khanna V.K., “Design and Fabrication of Si-Diaphragm, ZnO Piezoelectric Film-Based MEMS Acoustic Sensor Using SOI wafers”, IEEE Transactions On Semiconductor Manufacturing, 26: 233-241, (2013).
  • [5] Stadler A., “Analyzing UV/Vis/NIR Spectra-Sputtered ZnO:Al Thin-Films—II: Gas Law Dependencies”, IEEE Transactions On Semiconductor Manufacturing, 24: 464-471, (2011).
  • [6] Pierson J.F., Thobor-Keck A., Billard A., “Cuprite, paramelaconite and tenorite films deposited by reactive magnetron sputtering”, Applied Surface Science, 210: 359-367, (2003).
  • [7] Jung S.W., An S.J., Yi G.C., Jung C.U., Lee S.I., and Cho S., “Ferromagnetic properties of Zn1-xMnxO epitaxial thin films”, Applied Physica Lett., 80: 4561-4563, (2002).
  • [8] Asikuzun E., Ozturk O., Arda L., Terzioglu, C.,“Microstructural and electrical characterizations of transparent Er-doped ZnO nano thin films prepared by sol–gel process”, Journal of Materials Science: Materials in Electronics, 28:14314–14322, (2017).
  • [9] Asikuzun E., Ozturk O., “Theoretical and Experimental Approaches to Measuring Mechanical Properties of Zn1-xCoxO Binary Tetrahedral Bulk Semiconductors”, Journal of Materials Science: Materials in Electronics, 29 (10): 7971-7978, (2018).
  • [10] Firdaus M., Rusop M., Baki S.R.M.S., Salimin R.H., “Optical and Electrical Properties of ZnO and ZnO: TiO2 Thin Films Prepared by Sol-Gel Spray-Spin Coating Technique”, IEEE-ICSE2012 Proccess, Kuala Lumpur, Malaysia (2012).
  • [11] Huang C.W., Pan C.T., and Yang R.Y., “Characteristics of ZnO/Al/ZnO multilayers on glass with different ZnO film thicknesses prepared by cathodic vacuum arc deposition”, 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), (2012).
  • [12] Kaspar T.C., Droubay T., Heald S.M., Nachimuthu P., Wang C.M., Shutthanandan V., Johnson C.A., Gamelin D.R., S.A., Chambers, “Lack of Ferromagnetism in n-Type Cobalt-Doped ZnO Epitaxial Thin Films”, New J. Phys., 10: 055010, (2008).
  • [13] Wang Z.L., “Zinc oxide nanostructures: growth, properties and applications”, J. Phys Condens Matter., 16: 829-858, (2004).
  • [14] Pearton S.J., Norton D.P., Ip K., Heo Y.W., Steiner T., “Recent progress in processing and properties of ZnO”, Progress in Materials Science, 50: 293–340, (2005).
  • [15] Chen Z.W., Yao C.B., Hu J.Y., “The nonlinear optical properties and optical transition dynamics of Er doped ZnO films”, Optics & Laser Technology, 119: 105609, (2019).
  • [16] Masashi I., Shuji K., Takitaro M., Yoshinobu , A., Local structure analysis of an optically active center in Er-doped ZnO thin film", Journal of Applied Physics, 89:7, 3679-3684, (2001).
  • [17] Asikuzun E., Ozturk O., Arda L., Akcan D., Senol, S.D., Terzioglu C., “Preparation, structural and micromechanical properties of (Al/Mg) co-doped ZnO nanoparticles by sol–gel process”, Journal of Materials Science: Materials in Electronics, 26:8147–8159, (2015).
  • [18] Asikuzun E., Ozturk O., Arda L., Kartal F., Terzioglu C., “High-quality c-axis oriented non-vacuum Er doped ZnO thin films”, Ceramics International, 42(7):8085-8091, (2016).
  • [19] Heiba Z.K., Arda L., “XRD, XPS, optical, and Raman investigations of structural changes of nanoCo-doped ZnO”, Journal of Molecular Structure, 1022:167-171, (2012).
  • [20]Arda L, Açıkgöz M, Güngör A., “Microstructure Properties of Ni-Doped ZnO Films and Powder by Sol–Gel Process”, J. Supercond. Nov. Magn., 25: 2701–2705 (2012).
  • [21] Ozturk O., Yildirim G., Asikuzun E., Coskunyurek M., Yilmazlar M., Kilic A., “Change of formation velocity of Bi-2212 superconducting phase with annealing ambient”, Journal of Materials Science: Materials in Electronics, 24(11): 4643-4654, (2013).
  • [22] Asikuzun E., Donmez A., Arda L., Cakiroglu O., Ozturk O., Akcan D., Terzioglu C., “Structural and mechanical properties of (Co/Mg) co-doped nano ZnO”, Ceramics International, 41(5): 6326-6334 (2015).
  • [23] Senol S.D., Senol A., Ozturk O., Erdem M., “Effect of annealing time on the structural, optical and electrical characteristics of DC sputtered ITO nano thin films”, Journal of Materials Science: Materials in Electronics, 25(11): 4992-4999, (2014).
  • [24] Van der Pauw L.J., “A method of measuring specific resistivity and Hall effect of discs of arbitrary shape”, Philips Res. Rep., 13: 1-9, (1958).
  • [25] Chien-Yie T., Wei-Tse H., “Sol–gel derived undoped and boron-doped ZnO semiconductor thin films: Preparation and characterization”, Ceramics International, 39: 7425-7432, (2013).
  • [26] Shahbazi H., Tataei M., Enayati M., Shafeiey A., Malekabadi M.A., “Structure-transmittance relationship in transparent ceramics”, Journal of Alloys and Compounds, 785: 260-285, (2019).
  • [27] Li X., Xu Y., Mao X., Zhu Q., Xie J., Feng M., Jiang B., Zhang L., “Investigation of optical, mechanical, and thermal properties of ZrO2-doped Y2O3 transparent ceramics fabricated by HIP”, Ceramics International, 44(2): 1362-1369,(2018).

Characteristics of ZnO:Er Nano Thin Films Produced Different Thickness Using Different Solvent By Sol-Gel Method

Year 2022, Volume: 25 Issue: 1, 37 - 45, 01.03.2022
https://doi.org/10.2339/politeknik.676184

Abstract

In this study, Er doped ZnO based semiconducting nano thin films are produced by the sol-gel technique using dip coating method which is widely used method for preparing nano size materials. 〖Zn〗_(1-x) 〖Er〗_x O thin films are prepared different coating thickness using different solvent. The effect of the Er doping and film thickness on structural, electric and optic properties of the ZnO semiconducting nano thin films are investigated in detail and compared with undoped sample which prepared in same conditions. X-ray diffraction analysis (XRD) has been used to determine phase and lattice parameters of the semiconducting thin films and scanning electron microscope (SEM) measurements are made for microstructure properties. The resistivity measurement for electrical properties and transmittance measurement for optic properties have been carried out.

Project Number

KUBAP-05/2015-12

References

  • [1] Serin N., Serin T., Horzum Ş. and Çelik Y., “Annealing effects on the properties of copper oxide thin films prepared by chemical deposition”, Semiconductor Science and Technology, 20: 5, (2005).
  • [2] Sato K. and Katayama-Yoshida H., “Stabilization of Ferromagnetic States by Electron Doping in Fe-, Co- or Ni-Doped ZnO”, Japanese Journal of Applied Physica, 40:334 – 336, (2001).
  • [3] Peng Y., Huo D., He H., Li Y., Li L., Wang H., Oian Z., “Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism”, Journal of Magn. Magn. Mater., 324: 690 – 694, (2012).
  • [4] Prasad M., Sahula V. and Khanna V.K., “Design and Fabrication of Si-Diaphragm, ZnO Piezoelectric Film-Based MEMS Acoustic Sensor Using SOI wafers”, IEEE Transactions On Semiconductor Manufacturing, 26: 233-241, (2013).
  • [5] Stadler A., “Analyzing UV/Vis/NIR Spectra-Sputtered ZnO:Al Thin-Films—II: Gas Law Dependencies”, IEEE Transactions On Semiconductor Manufacturing, 24: 464-471, (2011).
  • [6] Pierson J.F., Thobor-Keck A., Billard A., “Cuprite, paramelaconite and tenorite films deposited by reactive magnetron sputtering”, Applied Surface Science, 210: 359-367, (2003).
  • [7] Jung S.W., An S.J., Yi G.C., Jung C.U., Lee S.I., and Cho S., “Ferromagnetic properties of Zn1-xMnxO epitaxial thin films”, Applied Physica Lett., 80: 4561-4563, (2002).
  • [8] Asikuzun E., Ozturk O., Arda L., Terzioglu, C.,“Microstructural and electrical characterizations of transparent Er-doped ZnO nano thin films prepared by sol–gel process”, Journal of Materials Science: Materials in Electronics, 28:14314–14322, (2017).
  • [9] Asikuzun E., Ozturk O., “Theoretical and Experimental Approaches to Measuring Mechanical Properties of Zn1-xCoxO Binary Tetrahedral Bulk Semiconductors”, Journal of Materials Science: Materials in Electronics, 29 (10): 7971-7978, (2018).
  • [10] Firdaus M., Rusop M., Baki S.R.M.S., Salimin R.H., “Optical and Electrical Properties of ZnO and ZnO: TiO2 Thin Films Prepared by Sol-Gel Spray-Spin Coating Technique”, IEEE-ICSE2012 Proccess, Kuala Lumpur, Malaysia (2012).
  • [11] Huang C.W., Pan C.T., and Yang R.Y., “Characteristics of ZnO/Al/ZnO multilayers on glass with different ZnO film thicknesses prepared by cathodic vacuum arc deposition”, 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), (2012).
  • [12] Kaspar T.C., Droubay T., Heald S.M., Nachimuthu P., Wang C.M., Shutthanandan V., Johnson C.A., Gamelin D.R., S.A., Chambers, “Lack of Ferromagnetism in n-Type Cobalt-Doped ZnO Epitaxial Thin Films”, New J. Phys., 10: 055010, (2008).
  • [13] Wang Z.L., “Zinc oxide nanostructures: growth, properties and applications”, J. Phys Condens Matter., 16: 829-858, (2004).
  • [14] Pearton S.J., Norton D.P., Ip K., Heo Y.W., Steiner T., “Recent progress in processing and properties of ZnO”, Progress in Materials Science, 50: 293–340, (2005).
  • [15] Chen Z.W., Yao C.B., Hu J.Y., “The nonlinear optical properties and optical transition dynamics of Er doped ZnO films”, Optics & Laser Technology, 119: 105609, (2019).
  • [16] Masashi I., Shuji K., Takitaro M., Yoshinobu , A., Local structure analysis of an optically active center in Er-doped ZnO thin film", Journal of Applied Physics, 89:7, 3679-3684, (2001).
  • [17] Asikuzun E., Ozturk O., Arda L., Akcan D., Senol, S.D., Terzioglu C., “Preparation, structural and micromechanical properties of (Al/Mg) co-doped ZnO nanoparticles by sol–gel process”, Journal of Materials Science: Materials in Electronics, 26:8147–8159, (2015).
  • [18] Asikuzun E., Ozturk O., Arda L., Kartal F., Terzioglu C., “High-quality c-axis oriented non-vacuum Er doped ZnO thin films”, Ceramics International, 42(7):8085-8091, (2016).
  • [19] Heiba Z.K., Arda L., “XRD, XPS, optical, and Raman investigations of structural changes of nanoCo-doped ZnO”, Journal of Molecular Structure, 1022:167-171, (2012).
  • [20]Arda L, Açıkgöz M, Güngör A., “Microstructure Properties of Ni-Doped ZnO Films and Powder by Sol–Gel Process”, J. Supercond. Nov. Magn., 25: 2701–2705 (2012).
  • [21] Ozturk O., Yildirim G., Asikuzun E., Coskunyurek M., Yilmazlar M., Kilic A., “Change of formation velocity of Bi-2212 superconducting phase with annealing ambient”, Journal of Materials Science: Materials in Electronics, 24(11): 4643-4654, (2013).
  • [22] Asikuzun E., Donmez A., Arda L., Cakiroglu O., Ozturk O., Akcan D., Terzioglu C., “Structural and mechanical properties of (Co/Mg) co-doped nano ZnO”, Ceramics International, 41(5): 6326-6334 (2015).
  • [23] Senol S.D., Senol A., Ozturk O., Erdem M., “Effect of annealing time on the structural, optical and electrical characteristics of DC sputtered ITO nano thin films”, Journal of Materials Science: Materials in Electronics, 25(11): 4992-4999, (2014).
  • [24] Van der Pauw L.J., “A method of measuring specific resistivity and Hall effect of discs of arbitrary shape”, Philips Res. Rep., 13: 1-9, (1958).
  • [25] Chien-Yie T., Wei-Tse H., “Sol–gel derived undoped and boron-doped ZnO semiconductor thin films: Preparation and characterization”, Ceramics International, 39: 7425-7432, (2013).
  • [26] Shahbazi H., Tataei M., Enayati M., Shafeiey A., Malekabadi M.A., “Structure-transmittance relationship in transparent ceramics”, Journal of Alloys and Compounds, 785: 260-285, (2019).
  • [27] Li X., Xu Y., Mao X., Zhu Q., Xie J., Feng M., Jiang B., Zhang L., “Investigation of optical, mechanical, and thermal properties of ZrO2-doped Y2O3 transparent ceramics fabricated by HIP”, Ceramics International, 44(2): 1362-1369,(2018).
There are 27 citations in total.

Details

Primary Language English
Subjects Engineering
Journal Section Research Article
Authors

Özgür Öztürk

Elif Aşıkuzun

Zeynep Banu Hacıoğlu

Serap Safran

Project Number KUBAP-05/2015-12
Publication Date March 1, 2022
Submission Date January 16, 2020
Published in Issue Year 2022 Volume: 25 Issue: 1

Cite

APA Öztürk, Ö., Aşıkuzun, E., Hacıoğlu, Z. B., Safran, S. (2022). Characteristics of ZnO:Er Nano Thin Films Produced Different Thickness Using Different Solvent By Sol-Gel Method. Politeknik Dergisi, 25(1), 37-45. https://doi.org/10.2339/politeknik.676184
AMA Öztürk Ö, Aşıkuzun E, Hacıoğlu ZB, Safran S. Characteristics of ZnO:Er Nano Thin Films Produced Different Thickness Using Different Solvent By Sol-Gel Method. Politeknik Dergisi. March 2022;25(1):37-45. doi:10.2339/politeknik.676184
Chicago Öztürk, Özgür, Elif Aşıkuzun, Zeynep Banu Hacıoğlu, and Serap Safran. “Characteristics of ZnO:Er Nano Thin Films Produced Different Thickness Using Different Solvent By Sol-Gel Method”. Politeknik Dergisi 25, no. 1 (March 2022): 37-45. https://doi.org/10.2339/politeknik.676184.
EndNote Öztürk Ö, Aşıkuzun E, Hacıoğlu ZB, Safran S (March 1, 2022) Characteristics of ZnO:Er Nano Thin Films Produced Different Thickness Using Different Solvent By Sol-Gel Method. Politeknik Dergisi 25 1 37–45.
IEEE Ö. Öztürk, E. Aşıkuzun, Z. B. Hacıoğlu, and S. Safran, “Characteristics of ZnO:Er Nano Thin Films Produced Different Thickness Using Different Solvent By Sol-Gel Method”, Politeknik Dergisi, vol. 25, no. 1, pp. 37–45, 2022, doi: 10.2339/politeknik.676184.
ISNAD Öztürk, Özgür et al. “Characteristics of ZnO:Er Nano Thin Films Produced Different Thickness Using Different Solvent By Sol-Gel Method”. Politeknik Dergisi 25/1 (March 2022), 37-45. https://doi.org/10.2339/politeknik.676184.
JAMA Öztürk Ö, Aşıkuzun E, Hacıoğlu ZB, Safran S. Characteristics of ZnO:Er Nano Thin Films Produced Different Thickness Using Different Solvent By Sol-Gel Method. Politeknik Dergisi. 2022;25:37–45.
MLA Öztürk, Özgür et al. “Characteristics of ZnO:Er Nano Thin Films Produced Different Thickness Using Different Solvent By Sol-Gel Method”. Politeknik Dergisi, vol. 25, no. 1, 2022, pp. 37-45, doi:10.2339/politeknik.676184.
Vancouver Öztürk Ö, Aşıkuzun E, Hacıoğlu ZB, Safran S. Characteristics of ZnO:Er Nano Thin Films Produced Different Thickness Using Different Solvent By Sol-Gel Method. Politeknik Dergisi. 2022;25(1):37-45.