Uydu Haberleşme Sistemleri için 8025-8400 MHz Düşük Gürültülü Kuvvetlendirici Tasarımı

Year 2024, Volume: 27 Issue: 4, 1643 - 1648, 25.09.2024

Burak Dökmetaş , Nursel Akçam

https://doi.org/10.2339/politeknik.1110050

Abstract

Gelişen uydu haberleşme sistemleri ile birlikte düşük gürültülü kuvvetlendirici (Low Noise Amplifier-LNA) ve alt sistemlerine gösterilen ilgi her geçen gün artmaktadır. Düşük gürültülü kuvvetlendirici alt sistemleri uydu haberleşmesinde düşük güçlü sinyalleri kuvvetlendirerek gürültü seviyesini en düşük seviyede tutmakta önemli bir rol oynamaktadır. Bu çalışma kapsamında, uydu haberleşme uygulamalarında kullanılabilecek 8025-8400 MHz frekans bandına sahip iki katlı düşük gürültülü kuvvetlendirici tasarımı gerçekleştirilmiştir. Tasarımda RT5880 alttaşı üzerine mikroşerit teknolojisi ve CE3512K2 transistörü kullanılmıştır. Tasarımda uyumlama devreleri mikroşerit hatlar ve paketli radyo frekansı (Radio Frequency-RF) malzemeleri ile gerçeklenmiştir. Geliştirilen LNA devresinin S-parametresi ölçüm sonuçlarına göre, giriş ve çıkış geri yansıma katsayıları sırasıyla -14 dB ve -15 dB’den daha iyi olduğu görülmüştür. Ölçülen kazanç değeri ise 21.9 dB’den iyi olarak elde edilmiştir. Ek olarak, 2 katlı LNA devresinin 40 mW güç tükettiği durumda gürültü figürü değerinin çalışma bandı içerisinde 1.1 dB’den düşük olduğu ve 1-dB bastırma noktasındaki çıkış gücünün ise +14.6 dBm olduğu görülmüştür.

Keywords

Düşük gürültülü kuvvetlendirici, LNA, uydu haberleşmesi, CE3512K2 transistör

Design of 8025-8400 MHz Low-Noise Amplifier (LNA) for Satellite Communication System

Abstract

Developments in satellite communication systems increase the interest in Low Noise Amplifier-LNA and its subsystems. Low-noise amplifier subsystems are used to amplify low-power signals and keep the noise at minimum level in satellite communications. In this study, a two-layer low-noise amplifier design is proposed for the frequency band range of 8025-8400 MHz. RT5880 substrate and CE3512K2 transistor are used as materials in the design. Matching circuits are realized with microstrip lines and packaged Radio Frequency-RF materials. According to the measurement results, the input (S11) and output (S22) reflection losses in the operating frequency band were obtained better than -14 dB and -15 dB, respectively. The measured gain value was obtained better than 21.9 dB. In addition, in the case that the 2-layer LNA circuit consumes 40 mW of power, the noise figure value is obtained lower than 1.1 dB in the operating band and the output power at the 1-dB suppression point is achieved +14.6 dBm.

Keywords

Low noise amplifier, LNA, satellite communication, CE3512K2 transistor

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