SILAR yöntemiyle elde edilen Cu2SnS3 ince filmlerin yapısal ve optik özellikleri

Year 2017, Volume: 21 Issue: 3, 505 - 510, 01.06.2017

AYKUT Astam

https://doi.org/10.16984/saufenbilder.289305

Cited By: 1

Abstract

 Bakır kalay sülfür (Cu₂SnS₃)
ince filmler, cam altlıklar üzerine sıralı iyonik tabaka adsorpsiyonu ve
reaksiyonu (SILAR) yöntemi kullanılarak, oda sıcaklığında elde edilen filmlerin
350°C’de 1 saat süre ile sülfür atmosferinde tavlanması
neticesinde büyütüldü. Filmlerin yapısal ve optik özellikleri, tavlama öncesi ve
sonrası, X-ışını difraksiyonu (XRD), taramalı elektron mikroskobu (SEM), enerji
ayırımlı X-ışını analizi (EDAX) ve optik soğurma ölçümleri kullanılarak
incelendi. XRD sonuçları, tavlama işleminin filmlerin kristal yapısını amorfdan
polikristale dönüştürdüğünü gösterdi. Elde edilen SEM görüntülerinden
tavlamayla filmlerin yüzey morfolojisinin değiştiği, EDAX sonuçlarından ise filmlerde
tavlama işlemi öncesi ve sonrası bakır fazlalığının olduğu belirlendi. Yapılan
optik soğurma ölçümlerinden filmlerin direk yasak enerji aralığının tavlamayla,
1.27 eV değerinden 1.21 eV değerine azaldığı gözlendi.

Keywords

Cu2SnS3, SILAR, ince film

Structural and optical properties of Cu2SnS3 thin films obtained by SILAR method

Abstract

Cu2SnS3 thin films were obtained by annealing of SILAR deposited films at 350°C for 1 hour in sulphur atmosphere.
The structural and optical properties of the films were investigated using X-ray diffraction (XRD), scanning electron
microscopy (SEM), energy dispersive X-ray analysis (EDAX) and optical absorption measurements, before and after
annealing. The XRD results showed that the annealing process transformed the crystal structure of the films from
amorphous to polycrystalline. SEM images revealed that the surface morphology of films was changed after annealing
while EDAX analysis showed that the films were excess in copper concentration before and after annealing. Optical
absorption measurements confirmed that the direct band gap of films decreased from 1.27 eV to 1.21 eV with
annealing.  

Keywords

Cu2SnS3, SILAR, thin film

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