Abstract
In this paper,
InGaAsN thin films were deposited by Thermionic Vacuum Arc (TVA) for the first
time. Deposition parameters were determined. These films were grown on
different type substrate material. These are glass, Si and poly Polyethylene
terephthalate (PET) materials. Crystal structures of the produced
samples were investigated by XRD analysis of the produced samples. Atomic
concentrations of the deposited samples were investigated by EDX. The surface properties of the films were
imaged by atomic force microscopy. Band gap values were calculated by optical
method from the absorbance spectra of the UV-Vis spectrophotometer. According
to obtained results, different atomic ratios were detected.
References
- Adamcyk, M., Schmid, J. H., Tiedje, T., Koveshnikov, A., Chahboun, A., Fink, V., & Kavanagh, K. L. (2002), Comparison of strain relaxation in InGaAsN and InGaAs thin films, Applied physics letters, 80(23), 4357-4359. doi: 10.1063/1.1485124
- Dumitras, G. (2003). Optical and Electrical Characterization of InGaAsN used for 1.3 µm lasers (Doctoral dissertation, Universität München).
- Fernández, S., Martínez-Steele, A., Gandía, J. J., & Naranjo, F. B. (2009), Radio frequency sputter deposition of high-quality conductive and transparent ZnO: Al films on polymer substrates for thin film solar cells applications, Thin Solid Films, 517(10), 3152-3156. doi:10.1016/j.tsf.2008.11.097
- Kondow, M., Nakatsuka, S. I., Kitatani, T., Yazawa, Y., & Okai, M. (1996), Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance, Japanese journal of applied physics, 35(11R), 5711. doi:10.1143/JJAP.35.5711
- Ong, W. L., Low, Q. X., Huang, W., Van Kan, J. A., & Ho, G. W. (2012), Patterned growth of vertically-aligned ZnO nanorods on a flexible platform for feasible transparent and conformable electronics applications, Journal of Materials Chemistry, 22(17), 8518-8524. doi: 10.1039/C2JM00027J
- Özen, S., Şenay, V., Pat, S., & Korkmaz, Ş. (2015), AlGaAs film growth using thermionic vacuum arc (TVA) and determination of its physical properties, The European Physical Journal Plus, 130(6), 1-6. doi: 10.1140/epjp/i2015-15108-3
- Pat, S., Korkmaz, Ş., Özen, S., & Şenay, V. (2015a), GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA), Materials Chemistry and Physics, 159, 1-5. doi:10.1016/j.matchemphys.2015.03.043
- Pat, S., Özen, S., Şenay, V., Korkmaz, Ş., & Şimşek, V. (2015b), Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method, Scanning. Accepted paper. doi: 10.1002/sca.21269
- Senay, V., Ozen, S., Pat, S., & Korkmaz, S. (2015a ), Direct and fast growth of a SI: GAAS thin film by mns of thermionic vacuum arc (TVA), In Plasma Sciences (ICOPS), 2015 IEEE International Conference on (pp. 1-1). IEEE. doi: 10.1109/PLASMA.2015.7179798
- Şenay, V., Özen, S., Pat, S., & Korkmaz, Ş. (2015b), Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc, Vacuum, 119, 228-232. doi:10.1016/j.vacuum.2015.05.030
- Yamaguchi, M., Nishimura, K. I., Sasaki, T., Suzuki, H., Arafune, K., Kojima, N., Araki, K. (2008), Novel materials for high-efficiency III–V multi-junction solar cells, Solar Energy, 82(2), 173-180. doi:10.1016/j.solener.2007.06.011
Abstract
Bu çalışmada InGaAsN ince filmler ilk defa farklı
bir teknik olan Termiyonik Vakum Ark (TVA) tekniği ile üretilmiştir. InGaAsN
ince filmler üretilirken TVA üretim parametreleri belirlenmiştir. İnce filmler
üç farklı alt taş üzerine gerçekleştirilmiştir. Bunlar cam, Si ve Polietilen
tereftalat (PET) alt taş malzemedir.
Üretilen ince filmlerin XRD analizleri ile kristal yapıları
aydınlatılmaya çalışılmıştır. Yüzey bileşenleri için EDX analizi
kullanılmıştır. Filmlerin yüzey oluşumları atomik kuvvet mikroskobu ile
görüntülendi. UV-Vis spektrofotometresi ile elde edilen soğurma değerlerinden
ise yapıların yasak enerji aralıkları değerleri incelenmiştir. Sonuçlara göre, farklı alt taşlar üzerine
farklı atomik bileşimler elde edilmiştir.
Keywords
References
- Adamcyk, M., Schmid, J. H., Tiedje, T., Koveshnikov, A., Chahboun, A., Fink, V., & Kavanagh, K. L. (2002), Comparison of strain relaxation in InGaAsN and InGaAs thin films, Applied physics letters, 80(23), 4357-4359. doi: 10.1063/1.1485124
- Dumitras, G. (2003). Optical and Electrical Characterization of InGaAsN used for 1.3 µm lasers (Doctoral dissertation, Universität München).
- Fernández, S., Martínez-Steele, A., Gandía, J. J., & Naranjo, F. B. (2009), Radio frequency sputter deposition of high-quality conductive and transparent ZnO: Al films on polymer substrates for thin film solar cells applications, Thin Solid Films, 517(10), 3152-3156. doi:10.1016/j.tsf.2008.11.097
- Kondow, M., Nakatsuka, S. I., Kitatani, T., Yazawa, Y., & Okai, M. (1996), Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance, Japanese journal of applied physics, 35(11R), 5711. doi:10.1143/JJAP.35.5711
- Ong, W. L., Low, Q. X., Huang, W., Van Kan, J. A., & Ho, G. W. (2012), Patterned growth of vertically-aligned ZnO nanorods on a flexible platform for feasible transparent and conformable electronics applications, Journal of Materials Chemistry, 22(17), 8518-8524. doi: 10.1039/C2JM00027J
- Özen, S., Şenay, V., Pat, S., & Korkmaz, Ş. (2015), AlGaAs film growth using thermionic vacuum arc (TVA) and determination of its physical properties, The European Physical Journal Plus, 130(6), 1-6. doi: 10.1140/epjp/i2015-15108-3
- Pat, S., Korkmaz, Ş., Özen, S., & Şenay, V. (2015a), GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA), Materials Chemistry and Physics, 159, 1-5. doi:10.1016/j.matchemphys.2015.03.043
- Pat, S., Özen, S., Şenay, V., Korkmaz, Ş., & Şimşek, V. (2015b), Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method, Scanning. Accepted paper. doi: 10.1002/sca.21269
- Senay, V., Ozen, S., Pat, S., & Korkmaz, S. (2015a ), Direct and fast growth of a SI: GAAS thin film by mns of thermionic vacuum arc (TVA), In Plasma Sciences (ICOPS), 2015 IEEE International Conference on (pp. 1-1). IEEE. doi: 10.1109/PLASMA.2015.7179798
- Şenay, V., Özen, S., Pat, S., & Korkmaz, Ş. (2015b), Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc, Vacuum, 119, 228-232. doi:10.1016/j.vacuum.2015.05.030
- Yamaguchi, M., Nishimura, K. I., Sasaki, T., Suzuki, H., Arafune, K., Kojima, N., Araki, K. (2008), Novel materials for high-efficiency III–V multi-junction solar cells, Solar Energy, 82(2), 173-180. doi:10.1016/j.solener.2007.06.011
Details
| Subjects | Engineering |
|---|---|
| Journal Section | Research Articles |
| Authors | |
| Publication Date | August 29, 2017 |
| Submission Date | April 5, 2016 |
| Acceptance Date | July 20, 2017 |
| Published in Issue | Year 2017 Volume: 22 Issue: 2 |
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