Ni/n-GaAs ve NiO/n-GaAs Diyotların Elektriksel Parametreleri Arasındaki İlişki

Yıl 2021, Cilt: 10 Sayı: 2, 415 - 422, 07.06.2021

Abdullah Özkartal , Dheyab Thaer Noori

https://doi.org/10.17798/bitlisfen.879884

Cited By: 1

Öz

Bu çalışmada, Ni/n-GaAs Schottky ve p-NiO/n-GaAs heteroeklem diyotları termal buharlaştırma yöntemi ile üretilmiştir. Üretilen numunelerin elektriksel özellikleri karanlıkta ve oda sıcaklığında, akım-voltaj (I-V) ve kapasitans-voltaj (C-V) ölçümleri ile incelenmiştir. Üretilen numunelerin idealite faktörü (n), engel yüksekliği (Фb) ve seri direnci (Rs), I-V ve C-V ölçümlerinden ayrı ayrı hesaplanmıştır. Ayrıca Cheung fonksiyonları yardımıyla da n, Фb ve Rs hesaplanarak sonuçların kararlılığı tesbit edilmiştir. Schottky diyot yapısının, p-n diyot yapısından daha iyi idealite faktörüne ve daha düşük engel yüksekliğine sahip olduğu belirlenmiştir.

Anahtar Kelimeler

p-NiO/n-GaAs, Ni/n-GaAs Schottky diyot, NiO ince film, Termal buharlaştırma

Destekleyen Kurum

Van Yüzüncü Yıl Üniversitesi Bilimsel Araştırma Projeleri Koordinatörlüğü

Proje Numarası

FYL-2018-7203

Teşekkür

Bu çalışma, Van Yüzüncü Yıl Üniversitesi Bilimsel Araştırma Projeleri Koordinatörlüğü tarafından FYL-2018-7203 proje numarası ile finansal olarak desteklenmiştir.

Kaynakça

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