Investigation of Copper-Iron Oxide Thin Film Grown by Co-Sputtering

Yıl 2023, Cilt: 12 Sayı: 3, 625 - 633, 28.09.2023

Sevda Sarıtaş

https://doi.org/10.17798/bitlisfen.1251421

Öz

Bu çalışmada, sırasıyla DC magnetron ve RF magnetron püskürtme ile demir oksit ve bakır oksit yapıları büyütülmüş ve CuxFe3-xO4 yapısı ise birlikte püskürtme (Co-sputtering) ile büyütülmüştür. Büyütülmüş ince filmlerin yapısal optik ve topografik incelemeleri detaylı olarak yapılmıştır. İnce filmlerin absorpsiyon ölçümleri, oda sıcaklığında Perkin Elmer UV/Visible Lambda 2S spektrometresi yardımıyla alınmıştır. Cam üzerine büyütülen Fe2O3, CuxFe3-xO4, Cu2O ince filmin (ahυ)2 (cm-1 eV2) karşı enerji grafiğinde çizilen fit ile yasak bant aralığı enerjisinin değeri sırasıyla 2.44, 2.39, 2.55 eV olarak hesaplanmıştır. Ayrıca ince film yapılarının yapısal ve topografik özellikleri, taramalı elektron mikroskobu (SEM), atomik kuvvet mikroskobu (AFM), X-ışını kırınımı (XRD), X-ışını fotoelektron spektroskopisi (XPS) ve Raman spektroskopisi ile incelenmiştir. XPS sonuçlarına göre; Fe3+ (Fe2O3) iyonu 2p3\2 orbitalinin için bağlanma enerjileri 710.85 eV ve Fe3+ iyonu (CuxFe3-xO4) için 712.49 eV'dir. Cu1+ iyonu (Cu2O) için 2p3\2 orbitalinin bağlanma enerjisi 933,64 eV'dir ve Cu2+ iyonu (CuxFe3-xO4) için 935,58 eV'dir. O2- iyonların 1s orbitalinin bağlanma enerjisi Fe2O3, CuxFe3-xO4, Cu2O için sırasıyla 530, 528 ve 532 eV'dir.

Anahtar Kelimeler

Copper oxide, iron oxide, thin film, Co-sputtering

Kaynakça

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