TEMPERATURE DEPENDENT (83-483 K) RAMAN SPECTROSCOPY ANALYSIS OF CVD GROWN WS2 MONOLAYERS

Yıl 2020, Cilt: 21 Sayı: 1, 155 - 164, 31.03.2020

Merve Oper , Nihan Kosku Perkgöz

https://doi.org/10.18038/estubtda.675907

Öz

For novel materials to be used in practical applications, their temperature dependent behavior and limitations need to be understood thoroughly. For example, the mobility of charge carriers, one of the important performance parameters in transistors, strongly depend on the change in the ambient temperature. Hence, characterization of potential optoelectronic materials at extreme temperatures is critical for future applications. In this study, we report on the changes of Raman scattering spectra as the temperature is changed from 83 K to 483 K for the 2D transition metal dichalcogenide materials, namely WS2 monolayers formed by chemical vapor deposition technique (CVD). Our results show that both E′ (E12g) and A1(A1g) modes red shift linearly as the temperature increases. The first order thermal coefficients have been calculated with the Grüneisen model, which suggests that in-plane mode is affected more by the increased temperature than that of out of plane mode. This difference is attributed to the defects in the sample as the flakes are grown by the CVD method. We also investigated the temperature dependence of the second order, 2LA(M) (at 345.7 cm-1) which is one of the most intense peaks in the spectra.

Anahtar Kelimeler

WS2, Raman Spectroscopy, Temperature Dependence

Destekleyen Kurum

Eskişehir Teknik Üniversitesi, TÜBİTAK

Proje Numarası

BAP 19ADP050, BAP 19ADP052, TUBITAK Project No: 116F445

Teşekkür

This work was supported by Eskişehir Technical University Research Project Numbers: BAP 19ADP050, BAP 19ADP052 and TUBITAK Project No: 116F445.

TEMPERATURE DEPENDENT (83-483 K) RAMAN SPECTROSCOPY ANALYSIS OF CVD GROWN WS2 MONOLAYERS

Öz

Proje Numarası

BAP 19ADP050, BAP 19ADP052, TUBITAK Project No: 116F445

Kaynakça

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