Defect Research of InGaN Based on Blue LED Structures Using Reciprocal Space Mapping

Yıl 2015, Cilt: 28 Sayı: 3, 365 - 375, 09.02.2015

Y. Baş M. Tamer Mustafa Öztürk , A. Gültekin H. Altıntaş S. Özçelik E. Özbay

Öz

Between n- GaN and p- AlGaN+GaN contacts, the blue light emitting diode (LED) structure with InGaN/GaN multiple quantum well has been grown using metalorganic vapor phase epitax (MOCVD) on c-oriented sapphire substrate. In order to research the strain and the stress of the lattice in crystal form, a reciprocal lattice space was mapped using a High Resolution X-Ray Diffractometer. In this study, by taking the qualities of the GaN epitaxial structure as reference point; relaxation, strain, hydrostatical strain and biaxial strain parameters are researched for the point defects taking the increasing temperatures into consideration. All parameters except the growth temperature of the InGaN layer were kept fixed for all samples. Depending on the growth temperature values, the results indicated a monotonous increasing-decreasing or decreasing-increasing manner. Additionally, the point defects of the blue LED structure on AlGaN layer have been compared to those of InGaN layer. While the lattice relax exchange of both layers were behaving in an opposite manner to each other; hydrostatic and biaxial strain exchanges were behaving in a parallel manner for both layers. As a result, since the points and the defects were carried from one layer to the other, the same tendencies were observed. 

Anahtar Kelimeler

Blue LED, MOCVD, HRXRD, Point defect

Kaynakça

• High-Brightness LED Market Review and Forecast 2007, Published: Strategies Unlimited 2007.
• M. K. Öztürk, S. Çörekçi, M. Tamer, S. Ş. Çetin, S. Özçelik, E. Özbay Applied Physics A-Materials Science&Processing, 114, 1215-1221 (2014).
• M.K. Öztürk, E. Arslan, İ. Kars, S. Özçelik, E. Özbay, Materials science in semiconductor processing, 16, 83-88 (2013).
• S. Çörekçi, M.K. Öztürk, Y. Hongbo, M. Çakmak, S. Özcelik, E.Özbay, Semiconductors, 47, 820-824 (2013).
• S. Nakamura, Science, 281, 956 (1998).
• S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita, T. Mukai, Appl. Phys. Lett. 76, 22-24 (2000).
• S.S. Cetin, M.K. Öztürk, S. Özçelik, E. Özbay, Crystal Research and Technology, 47(8), 824-833 (2012).
• S. Korçak, M.K. Öztürk, S. Çörekçi, B. Akaoğlu, Y. Hongbo, M. Çakmak, S. Sağlam, S. Özcelik, E.Özbay, Surface Science, 601, 3892-3897 (2007).
• J.H. Ryou, W. Lee, J. Limb, D. Yoo, J.P. Liu, R.D. Dupuis, Z.H. Wu, A.M. Fischer, F.A. Ponce, Appl. Phys. Lett. 92, 101113:1-3 (2008).
• -
• A.Yıldız, M.K. Öztürk, M. Bosi, S. Özçelik, M. Kasap, Chinese Phys. B 18(9), 4007-4012 (2009).
• Krost, A. Dadgar, G. Strassburger, R. Clos, Phys. Stat. Sol. (a) 200(1), 26-35 (2003).
• M.K. Öztürk, Y. Hongbo, B. Sarikavak, S. Korcak, S. Özçelik, E. Özbay, J. Mater. Sci: Mater. Electron., 21 (2), 185-191 (2010).
• Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J.W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E.R. Weber, M.D. Bremser, R.F. Davis, Phys. Rev. B 54, 17745-17753 (1996).
• M.K. Öztürk, H. Altuntaş¸ S. Çörekçi, Y. Hongbo, S. Özçelik and E. Özbay, 47, 19-27 (2011).
• Baş, Y., Demirel, P., Akın, N., .Başköse, C., Özen, Y., Kınacı B., Öztürk, M.K., Özçelik, S. and Özbay, E. (2014). Microstructural defect properties of InGaN/GaN blue light emitting diode structures. Journal of Materials Science: Materials in Electronics, 25(9), 3924-3932.
• Kisielowski, Semicon. Semimet., 57, 275-317 (1999).
• Wassermann G and Grewen J 1962 Texturen metallischer Werkstoffe (Berlin: Springer) pp 754–5
• M. A. Moram and M. E. Vickers, Rep. Prog. Phys., 72, 036502 (2009).
• Suryanarayana, M.G. Norton, X-Ray Diffraction: A practical Approach, Plenum Press, New York, 1998.
• M. Schuster, P. O. Gervais, B. Jobst, W. Ho¨sler, R. Averbeck, H. Riechert, A. Iberlk and R. Sto¨mmerk, J. Phys. D: Appl. Phys. 32, 56 (1999).
• S.I. Cho, K. Chang, M.S. Kwon, J. Mater. Sci., 43, 406-408 (2008).
• V.S. Harutyunyan, A.P. Aivazyan, E.R. Weber, Y. Kim, Y. Park, S.G. Subramanya, J. Phys. D: Appl. Phys., 34, A35-A39 (2001).
• V. Kachkanov B. Leung, J. Song, Y. Zhang, M.-C. Tsai, G. Yuan, J. Han2 & K. P. O’Donnell, Scientific Reports, 4, 4651, (2014).
• M.A.G. Halliwell, J. Cryst. Growth, 170, 47-54 (1997).
• S.I. Cho, K. Chang, M.S. Kwon, J. Mater. Sci., 42, 3569-3572 (2007).