Fabrication of SnS thin film by rapid thermal processing: effect of annealing temperature in sulfurization process

Yıl 2022, Cilt: 12 Sayı: 2, 404 - 413, 15.04.2022

Ali Çiriş , Mehmet Ali Olğar

https://doi.org/10.17714/gumusfenbil.1006581

Öz

In this study, the effect of sulfurization temperature on properties of SnS thin films was investigated. The SnS thin films were fabricated by two-stage method includes deposition of SnS films by magnetron sputtering using a single SnS target, followed by annealing/sulfurization treatment in Rapid Thermal Processing (RTP) system at 225, 300 and 375 °C temperatures. Several characterization techniques such as XRD, Raman spectroscopy, EDX, optical transmission and Van der Pauw were used for analyses of the films. The EDX analyses showed that all the samples had almost stoichiometric (S/Sn~1) chemical composition. However, the amount of sulfur in the samples increased slightly as the sulfurization temperature increased. XRD pattern of the films exhibited constitution of orthorhombic SnS structure regardless of annealing temperature. The SnS2 secondary phase was observed in addition to orthorhombic SnS phase in the sample annealed at highest reaction temperature (375°C). Raman spectroscopy measurements of the films verified constitution of orthorhombic SnS structure. The band gap of the films exhibited distinction from 1.42 to 1.81 eV regarding to annealing temperature. The electrical characterization of the most promising SnS thin film sulfurized at 300°C had resistivity and charge carrier concentration values 1.07x104 Ω.cm and 1.70x1014 cm-3, respectively. Based on the all characterizations, it can be deduced that SnS thin film sulfurized at 300°C exhibited more outstanding structural and optical properties for potential solar cell applications.

Anahtar Kelimeler

Rapid thermal processing (RTP), RF magnetron sputtering, Sulfurization temperature, Tin sulfide (SnS)

Hızlı ısıl işlemle SnS ince filmlerinin üretimi: sülfürleme işleminde tavlama sıcaklığının etkisi

Öz

Bu çalışmada, sülfürleme sıcaklığının SnS ince filmlerin özellikleri üzerine etkisi araştırıldı. SnS ince film örnekleri, RF saçtırma metodunda tek hedef SnS saçtırma kaynağı kullanılarak ile SnS filmlerinin biriktirilmesi ve devamında 225, 300 ve 375°C sıcaklıklarda Hızlı Isıl İşlem (RTP) sistemiyle tavlama/sülfürleme işlemi kullanılmasıyla iki aşamada üretildi. Filmlerin analizleri için XRD, Raman spektroskopisi, EDX, optik geçirgenlik ve Van der Pauw gibi çeşitli karakterizasyon teknikleri kullanıldı. EDX analizleri, tüm numunelerin neredeyse stokiyometrik (S/Sn~1) kimyasal kompozisyona sahip olduğunu gösterdi. Ancak sülfürleme sıcaklığı arttıkça numunelerdeki sülfür miktarının hafifçe arttığı görüldü. Filmlerin XRD spektrumları, tavlama sıcaklığından bağımsız olarak ortorombik SnS yapısının oluşumunu gösterdi. En yüksek sıcaklıkta (375°C) tavlanan SnS örneğinde ortorombik SnS fazının yanında SnS2 ikincil faz oluşumu gözlendi. Filmlerin Raman spektroskopi ölçümleri, ortorombik SnS yapısının oluşumunu doğruladı. Filmlerin bant aralığının, sülfürleme sıcaklığına bağlı olarak 1.42 ile 1.81 eV arasında değiştiği belirlendi. Sergilediği özellikler ile öne çıkan örnek olan 300°C’de sülfürlenen SnS ince filminin elektriksel karakterizasyonu, özdirenç ve yük taşıyıcı konsantrasyonunun sırasıyla 1.07x104 Ω.cm ve 1.70x1014 cm-3 olduğu belirlendi. Gerçekleştirilen tüm karakterizasyonlara dayanarak, 300°C'de sülfürlenen SnS ince filminin potansiyel güneş hücre uygulamaları için daha üstün yapısal ve optik özelliklere sahip olduğu sonucuna varıldı.

Anahtar Kelimeler

Hızlı ısıl işlem (RTP), RF mıknatıssal saçtırma, Sülfürleme sıcaklığı, Kalay sülfür (SnS)

Kaynakça

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