Investigation of X-ray radiation response to electrical properties of Mo/Cu(In0.7Ga0.3)Te2/p-Si/Al semiconductor diode

Yıl 2023, , 139 - 148, 31.12.2023

Semih Ağca , Semra Arslan , Güven Çankaya

https://doi.org/10.54187/jnrs.1362313

Öz

Diodes are exposed to radiation in many operating environments, and it is important to investigate the radiation effect. In this study, the impact of X-ray radiation on the electrical properties of Mo/Cu(In0.7Ga0.3)Te2/p-Si/Al semiconductor diode was explored by I-V measurements performed before and after radiation doses between 200 and 1000 centiGray. The semiconductor diode was exposed to radiation by a linear accelerator having 6 MV X-ray. I-V measurements and the Cheung-Cheung method demonstrated the differences in series resistance, ideality factor, and barrier height. Moreover, the interface state density was obtained from I-V results. The radiation dose increased the ideality factor and decreased the barrier height. This result was thought to be due to the increase in the interface state density and the defects in the diode interface. The series resistance was increased by increasing the radiation dose due to a possible decrease in mobility and free carrier concentration. As a result of exposure to X-ray, defects occurred and due to these defects, the diode deviated from the ideal. It has been observed that the electrical properties of the diode were sensitive to X-ray radiation. The study demonstrated that the Mo/Cu(In0.7Ga0.3)Te2/p-Si/Al semiconductor diode can be implemented in X-ray radiation detection systems.

Anahtar Kelimeler

Semiconductor diode, Chalcopyrite, X-ray radiation, Barrier height, Series resistance

Destekleyen Kurum

Projects Office of Ankara Yıldırım Beyazıt University

Proje Numarası

599-3371

Kaynakça

• E. Vittone, J. G. Lopez, M. Jaksic, M. C. J. Ramos, A. Lohstroh, Z. Pastuovic, S. Rath, R. Siegele, N. Skukan, G. Vizkelethy, A. Simon, Determination of radiation hardness of silicon diodes, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 449 (2019) 6–10.
• A. Hossain, V. Yakimovich, A. E. Bolotnikov, K. Bolton, G. S. Camarda, Y. Cui, J. Franc, R. Gul, K. H. Kim, H. Pittman, G. Yang, R. Herpst, R. B. James, Development of cadmium magnesium telluride (Cd1-xMgxTe) for room temperature X- and gamma-ray detectors, Journal of Crystal Growth 379 (2013) 34–40.
• A. Karmakar, J. Wang, J. Prinzie, V. De Smedt, P. Leroux, A review of semiconductor based ionizing radiation sensors used in harsh radiation environments and their applications, Radiation 1 (3) (2021) 194–217.
• M. A. Salari, E. Şenarslan, B. Güzeldir, M. Sağlam, Effects of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode, Journal of Physics: Conference Series 707 (1) (2016) Article Number 012018 7 pages.
• S. Priyadarshi, V. Dubey, S. Dubey, Effect of various radiations on the working of P-N junction diode, International Journal of Advanced Research in Electrical, Electronics and Instrumentation Engineering 6 (5) (2017) 4016–4023.
• M. B. Tagaev, Effect of ionizing radiation on the silicon IMPATT diode characteristics, Turkish Journal of Physics 23 (6) (1999) 985–988.
• A. Candelori, D. Contarato, N. Bacchetta, D. Bisello, G. Hall, E. Noah, M. Raymond, J. Wyss, High-energy ion irradiation effects on thin oxide p-channel MOSFETs, IEEE Transactions on Nuclear Science 49 (3) (2002) 1364–1371.
• A. Belousov, E. Mustafin, W. Ensinger, Short and long term ionizing radiation effects on charge-coupled devices in radiation environment of high-intensity heavy ion accelerators, Journal of Instrumentation 7 (11) (2012) Article Number C11002 6 pages.
• S. İlik, F. B. Gencer, N. Ş. Solmaz, A. Çağlar, M. B. Yelten, Radiation tolerance impact of trap density near the drain and source regions of a MOSFET, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 449 (2019) 1–5.
• A. Owens, A. Peacock, Compound semiconductor radiation detectors, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 531 (1-2) (2004) 18–37.
• G. Yang, A. E. Bolotnikov, P. M. Fochuk, O. Kopach, J. Franc, E. Belas, K. H. Kim, G. S. Camarda, A. Hossain, Y. Cui, A. L. Adams, A. Radja, R. Pinder, R. B. James, Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors, Journal of Crystal Growth 379 (2013) 16–20.
• P. Fochuk, R. Grill, I. Nakonechnyi, O. Kopach, O. Panchuk, Y. Verzhak, E. Belas, A. E. Bolotnikov, G. Yang, R. B. James, Effect of Cd0.9Zn0.1Te:In crystals annealing on their high-temperature electrical properties, IEEE Transactions on Nuclear Science 58 (5) (2011) 2346–2351.
• K. H. Kim, J. Suh, A. E. Bolotnikov, P. M. Fochuk, O. V. Kopach, G. S. Camarda, Y. Cui, A. Hossain, G. Yang, J. Hong, R. B. James, Temperature-gradient annealing of CdZnTe under Te overpressure, Journal of Crystal Growth 354 (1) (2012) 62–66.
• Y. Gu, C. Rong, Y. Xu, H. Shen, G. Zha, N. Wang, H. Lv, X. Li, D. Wei, W. Jie, Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 343 (2015) 89–93.
• A. C. Stowe, J. Woodward, E. Tupitsyn, E. Rowe, B. Wiggins, L. Matei, P. Bhattacharya, A. Burger, Crystal growth in LiGaSe2 for semiconductor radiation detection applications, Journal of Crystal Growth 379 (2013) 111–114.
• D. Ning, M. Hu, M. Ma, Z. Wang, Z. Wang, Q. Wen, B. Du, E. Wang, S. Hu, M. Chen, C. Yang, W. Li, A novel energy-resolved radiation detector based on the optimized CIGS photoelectric absorption layer, Journal of Power Sources 536 (2022) Article ID 231520 10 pages.
• O. Aissaoui, L. Bechiri, S. Mehdaoui, N. Benslim, M. Benabdeslem, X. Portier, H. Lei, J. L. Doualan, G. Nouet, A. Otmani, Study of flash evaporated CuIn1-xGaxTe2 (x=0, 0.5 and 1) thin films, Thin Solid Films 517 (7) (2009) 2171–2174.
• S. Fiat, P. Koralli, E. Bacaksiz, K. P. Giannakopoulos, M. Kompitsas, D. E. Manolakos, G. Çankaya, The influence of stoichiometry and annealing temperature on the properties of CuIn0.7Ga0.3Se2 and CuIn0.7Ga0.3Te2 thin films, Thin Solid Films 545 (2013) 64–70.
• A. Karatay, B. Küçüköz, G. Çankaya, A. Ates, A. Elmalı, The effect of Se/Te ratio on transient absorption behavior and nonlinear absorption properties of CuIn0.7Ga0.3(Se1-xTex)2 (0≤x≤1) amorphous semiconductor thin films, Optical Materials 73 (2017) 20–24.
• S. Fiat, E. Bacaksiz, M. Kompitsas, G. Çankaya, Temperature and tellurium (Te) dependence of electrical characterization and surface properties for a chalcopyrite structured Schottky barrier diode, Journal of Alloys and Compounds 585 (2014) 178–184.
• N. Basman, R. Uzun, R. Ozcakır, I. Erol, G. Cankaya, O. Uzun, Effect of a new methacrylic monomer on diode parameters of Ag/p-Si Schottky contact, Journal of Microelectronics, Electronic Components and Materials 46 (4) (2016) 190–196.
• S. Fiat, İ. Polat, E. Bacaksiz, M. Kompitsas, G. Çankaya, The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes, Current Applied Physics 13 (6) (2013) 1112–1118.
• S. K. Cheung, N. W. Cheung, Extraction of Schottky diode parameters from forward current-voltage characteristics, Applied Physics Letters 49 (2) (1986) 85–87.
• A. Siddiqui, M. Usman, Radiation tolerance comparison of silicon and 4H-SiC Schottky diodes, Materials Science in Semiconductor Processing 135 (2021) Article Number 106085 6 pages.
• M. H. Suhail, I. M. Ibrahim, Z. Ahmad, S. M. Abdullah, K. Sulaiman, ITO/PEDOT:PSS/MEH:PPV/Alq3/LiF/Au as a Schottky diode, International Journal of Application or Innovation in Engineering & Management 2 (1) (2013) 130–136.
• K. Akkiliç, A. Türüt, G. Çankaya, T. Kiliçoğlu, Correlation between barrier heights and ideality factors of Cd/n-Si and Cd/p-Si Schottky barrier diodes, Solid State Communications 125 (10) (2003) 551–556.
• S. Sönmezoğlu, S. Şenkul, R. Taş, G. Çankaya, M. Can, Electrical and interface state density properties of polyaniline-poly-3-methyl thiophene blend/p-Si Schottky barrier diode, Solid State Sciences 12 (5) (2010) 706–711.
• A. Kaymaz, E. E. Baydilli, H. U. Tecimer, Ş. Altındal, Y. Azizian-Kalandaragh, Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements, Radiation Physics and Chemistry 183 (2021) Article Number 109430 9 pages.
• S. Krishnan, G. Sanjeev, M. Pattabi, Electron irradiation effects on the Schottky diode characteristics of p-Si, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 266 (4) (2008) 621–624.
• D. A. Oeba, J. O. Bodunrin, S. J. Moloi, Electrical properties of 3 MeV proton irradiated silicon Schottky diodes, Physica B: Physics of Condensed Matter 610 (2021) Article Number 412786 6 pages.
• E. E. Kutluoğlu, E. Ö. Orhan, Ö. Bayram, S. B. Ocak, Gamma-ray irradiation effects on capacitance and conductance of graphene-based Schottky diode, Physica B: Physics of Condensed Matter 621 (2021) Article Number 413306 7 pages.
• S. Sönmezoğlu, C. B. Durmuş, R. Taş, G. Çankaya, M. Can, Fabrication and electrical characterization of pyrrole-aniline copolymer-based Schottky diodes, Semiconductor Science and Technology 26 (5) (2011) Article Number 055011 6 pages.
• H. M. J. Al-Ta’ii, V. Periasamy, Y. M. Amin, Electronic properties of DNA-based Schottky barrier diodes in response to alpha particles, Sensors 15 (5) (2015) 11836–11853.
• G. Lioliou, X. Meng, J. S. Ng, A. M. Barnett, Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 813 (2016) 1–9.
• H. Çulcu, M. Gökçen, A. Allı, S. Allı, Current-voltage characteristics of Au/PLiMMA/n-Si diode under ultraviolet irradiation, Journal of Physics and Chemistry of Solids 103 (2017) 197–200.
• S. Nigam, J. Kim, F. Ren, G. Y. Chung, M. F. MacMillan, R. Dwivedi, T. N. Fogarty, R. Wilkins, K. K. Allums, C. R. Abernathy, S. J. Pearton, J. R. Williams, High energy proton irradiation effects on SiC Schottky rectifiers, Applied Physics Letters 81 (13) (2002) 2385–2387.
• S. Chand, J. Kumar, Current-voltage characteristics and barrier parameters of Pd2Si/p-Si(111) Schottky diodes in a wide temperature range, Semiconductor Science and Technology 10 (12) (1995) Article Number 1680 6 pages.
• M. E. Stuckelberger, T. Nietzold, B. West, R. Farshchi, D. Poplavskyy, J. Bailey, B. Lai, J. M. Maser, M. I. Bertoni, Defect activation and annihilation in CIGS solar cells: an operando x-ray microscopy study, Journal of Physics: Energy 2 (2) (2020) Article Number 025001 13 pages.