Investigation of the Lorenz number and the carrier concentration of the GaAs semiconductor depending on temperature

Yıl 2021, Cilt: 10 Sayı: 3, 89 - 97, 31.12.2021

Ebru Çopuroğlu

https://doi.org/10.54187/jnrs.1013381

Öz

As is known, semiconductors are insulators under normal conditions but can become conductive with external excitation. Considering the effects of acting on these materials, the number of free electrons and the electrical conductivity will increase with increasing temperature. The increase in the concentration of free electrons in the semiconductor can be shown as the increase in electrical conductivity. If a semiconductor is exposed to an electric field with increasing concentration, we can have an idea about how the number of free electrons or the speed of free electrons will be affected. It is well known that it is necessary to calculate two-parameter Fermi functions to solve the properties of kinetic effects and electron transport phenomena in semiconductors. Effective methods have been developed for the calculation of two-parameter Fermi functions in literature. In this study, analytical calculations for the Lorenz number and the carrier concentration of the GaAs semiconductor were made using the two-parameter Fermi function.

Anahtar Kelimeler

Hall Coefficient, Fermi integral, Carrier concentration, Semiconductors

Kaynakça

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