Review of Optoelectronic Properties of ZnO Photodetector

Yıl 2022, , 9 - 21, 09.07.2022

Kishwar Mohammed Wasman , Bestoon Hamadameen

https://doi.org/10.54565/jphcfum.1026868

Cited By: 3

Öz

Photodetection has been gained a lot of attention in last years biased on military wide range and civil application. With essential properties of Zno which has the wide band gap, strong radiation hardness, low cost and good chemical stabilities. ZnO are considered as the most successful candidate for UV photodetector. The study of our report is to review photodetectors based on doped Zno nanostructures and the new advances in ZnO nanostructured generation technique including adjustment and doping methods with modifications of ZnO photodetector. Final part of this review is about literature reviews were reported in recent years about optoelectrical property of Zno nanostructures, due to the fact that Zinc oxide is an important semiconductor material for optoelectronic and industrial applications, such solar cell, photosensors and photodetectors.

Anahtar Kelimeler

ZnO, Photodetectors, Optoelectrical

Kaynakça

• [1] Sandvik, P., et al., AlxGa1− xN for solar-blind UV detectors, Journal of crystal growth, 231(3)(2001):366-370.
• [2] Young, S.-J., et al., ZnO metal–semiconductor–metal ultraviolet sensors with various contact electrodes, Journal of crystal growth, 293(1)(2006):43-47.
• [3] Varenne, C., et al., Improvement in lifetime of pseudo-Schottky diode sensor: Towards selective detection of O3 in a gaseous mixture (O3, NO2), Thin Solid Films, 516(8)(2008):2237-2243.