Fabrication of Au/CuPc/n-Si/In Schottky Diode and Investigation of Diode Parameters from Current-Voltage Characteristics

Yıl 2020, Cilt: 10 Sayı: 1, 230 - 242, 15.06.2020

Serkan Eymur , Nihat Tuğluoğlu

https://doi.org/10.31466/kfbd.711892

Öz

Copper phthalocyanine organic thin film was deposited on n-Si semiconductor with indium (In) ohmic contact by the spin coating method. Gold (Au) metal is formed by thermal evaporation technique to form a rectifier contact. As a result, Au/CuPc/n-Si/In Schottky diode structure was produced. Diode parameters such as ideality factor, Schottky barrier height, saturation current, series resistance and shunt resistance were investigated by means of current-voltage (I-V) measurements. CuPc thin film deposited between Au and n-Si has shown a good rectifying properties. From this analysis, the values of Schottky barrier height and ideality factor at room temperature have determined as 0.757 eV and 2.49, respectively. Results show that the fabricated diode can be used in various optoelectronic applications.

Anahtar Kelimeler

Copper phthalocyanine, Schottky barrier diode, current-voltage, barrier height, ideality factor

Proje Numarası

FEN-BAP-C-09112017-163

Au/CuPc/n-Si/In Schottky Diyotunun Üretilmesi ve Akım-Gerilim Karakteristiklerinden Diyot Parametrelerinin Araştırılması

Öz

İndiyum (In) omik kontaklı n-Si yarıiletkeni üzerinde döndürme kaplama yöntemi ile bakır ftalosiyanin (CuPc) organik ince film biriktirilmiştir. Doğrultucu kontak oluşturmak için altın (Au) metali ısısal buharlaştırma tekniği yardımı ile oluşturulmuştur. Sonuçta Au/CuPc/n-Si/In Schottky diyot yapısı üretilmiştir. İdealite faktörü, Schottky engel yüksekliği, doyma akımı, seri direnç ve şönt direnci gibi diyot parametreleri akım-gerilim (I-V) ölçümleri yardımıyla araştırılmıştır. Au ve n-Si arasında biriktirilen CuPc ince filmi iyi bir doğrultma özelliği göstermiştir. Bu analizde, Schottky engel yüksekliği ve idealite faktörü değerleri oda sıcaklığında sırasıyla 0.757 eV ve 2.49 olarak belirlenmiştir. Sonuçlar, üretilen diyodun çeşitli optoelektronik uygulamalarda kullanılabileceğini göstermektedir.

Anahtar Kelimeler

Bakır ftalosiyanin, Schottky engel diyot, akım-gerilim, engel yüksekliği, idealite faktörü

Destekleyen Kurum

GİRESUN ÜNİVERSİTESİ

Proje Numarası

FEN-BAP-C-09112017-163

Kaynakça

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