CVD VE PECVD TEKNİĞİ KULLANILARAK BAKIR FOLYOLAR ÜZERİNDE GRAFEN NANOYAPILARIN ELDE EDİLMESİ VE KARAKTERİZASYONU

Yıl 2019, Cilt: 8 Sayı: 2, 1126 - 1134, 31.07.2019

Özkan Bayram , Erdal İğman Önder Şimşek

https://doi.org/10.28948/ngumuh.598128

Öz

   Bu
çalışmada, CH₄ gazı kullanılarak bakır folyolar üzerinde grafen ince
filmlerin sentezlenmesi amaçlanmıştır. İnce filmlerin elde edilebilmesi için
plazma destekli kimyasal buhar biriktirme (PECVD) ve kimyasal buhar biriktirme
(CVD) yöntemi kullanılmıştır. Bakır alt-taşlar, standart ön temizlik
yapıldıktan sonra kuvars camdan yapılmış reaktöre yerleştirilmiştir. Vakum
odasının taban basıncı 5-10 mTorr’a düşürüldükten ve hidrojen gazı ile tavlama
işlemi yapıldıktan sonra, CH₄ gazı ortama gaz akış kontrol ünitesi yardımıyla
gönderilmiştir. PECVD sisteminde; RF güç kaynağı (13,56 MHz), kontrol ünitesi
vasıtasıyla aktif hale getirilerek, üretilen enerji ortama gönderilmiştir. İşlem
basıncı 100 mTorr, sıcaklık 600 ^˚C, RF gücü 50 W ve kaplama süresi ise
20 dakika olarak ayarlanmıştır. CVD tekniğinde ise, RF gücü ortadan kaldırılmış
ve büyütme sıcaklığı 1000 ^˚C olarak belirlenmiştir. Elde edilen Grafen
nanoyapıların karakterizasyonu için Raman, SEM ve TEM analizleri
gerçekleştirilmiştir. Raman sonuçlarına göre, CVD yöntemiyle elde edilen
yapılar, tek tabaka grafen yapısını doğrulamıştır. Bununla beraber PECVD
tekniği ile tek tabaka grafen nanoyapılardan ziyade çok tabakalı yapı elde
edildi.

Anahtar Kelimeler

PECVD, CVD, Grafen, İnce Film

Teşekkür

Bu çalışma, Atatürk Üniversitesi Bilimsel Araştırma Projeleri kapsamında 2016-176 ID numarası ile desteklenmiştir.

FABRICATION AND CHARACTERIZATION OF GRAPHENE NANOSTRUCTURE ON COPPER FOILS USING CVD AND PECVD TECHNIQUE

Öz

 

   In this study, it was aimed
to synthesize graphene thin films on copper foils using CH₄ gas.
Plasma enhanced chemical vapor deposition (PECVD) and chemical vapor deposition
(CVD) method were used to obtain thin films. Copper foils were placed in quartz
reactor chamber after standard pre-cleaning. Then, the base pressure of the
vacuum chamber was lowered to 5-10 mTorr. The foils was annealed with hydrogen
gas and CH₄ gas was sent to the chamber by means of gas flow
controller. In PECVD system;  RF power
supply (13.56 MHz) was activated by the control unit and the plasma was be
formed with generated energy. The deposition pressure was set to 100 mTorr,  substrate temperature was 600 ^˚C,
RF power was 50 W and deposition time was 20 minutes. In the CVD technique, the
RF power was eliminated and the deposition temperature was determined as 1000 ˚C.
Raman, SEM and TEM analysis were performed for the characterization of the
obtained graphene nanostructures. According to the results of Raman, the thin
film obtained by the CVD method confirmed the single-layer graphene. However,
single-layer graphene could not be obtained by PECVD technique.

 

Anahtar Kelimeler

PECVD, CVD, Graphene, Thin Film

Kaynakça

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