Analyzing The InGaN LED Structures for White LED Applications

Yıl 2017, Cilt: 20 Sayı: 3, 531 - 536, 15.09.2017

İlknur Kars Durukan , Mustafa Öztürk , Süleyman Özçelik , Ekmel Özbay

Öz

In this paper, blue-light InGaN/GaN light-emitting diodes were deposited on
sapphire substrate by the Metal Organic Chemical
Vapor Deposition (MOCVD) to investigate the properties of blue LEDs with
various well thickness having different indium composition. Structural
properties of LEDs was studied by high-resolution X-ray diffraction (HRXRD),
Photoluminescence (PL) and ultraviole (UV). Our aim is to increase the quality of the LED
structure by taking advantage of the mosaic structure calculations.  The use of LED in commercial areas has increased.
But, there are great difficulties in preventing defects. Lateral and vertical
crystal size, dislocations, tilt and twist properties are investigated with
HR-XRD device by Vegard and William hall semi-experimental methods.  While
dislocation value of the first sample is lower than first sample with less
indium content ration, stress value of first sample is higher than second
sample. In addition, The twist angle of first sample is lower. This shows that
while the structure is crystallized, the tension is much greater, which is an
interesting result. This is due to the mismatch when the diode is cooled to
lower temperatures than the growth temperature. 

Anahtar Kelimeler

InGaN/GaN, MOCVD, HRXRD, PL, UV

Kaynakça

• 1) Chen H.-S., Yeh D.-M., Lu C.-F., Huang C.-F., Lu Y.-C., Chen C.-Y., Huang J.-J., and Yanga C. C., “Mesa-size-dependent color contrast in flip-chip blue/green two-color InGaN/GaN multi-quantum-well micro-light-emitting diodes”, Applied Physics Letters, 89: 093501, (2006).
• 2) Öztürk M.K., Çörekçi S., Tamer M., Çetin S.S., Özçelik S. And Özbay E. “Microstructural properties of InGaN/GaN light-emitting diodestructures with different In content grown by MOCVD”, Applied Physics A, 114: 1215–1221, (2014).
• 3) Yeh D.-M., Huang C.-F., Chen H.-S., Tang T.-Y., Lu C.-F., Lu Y.-C., Huang J.-J., Yang C. C., Liu I-S. and Su W.-F., “Control of the color contrast of a polychromatic light-emitting device with CdSe–ZnS nano-crystals on an InGaN–GaN quantum-well structure”, IEEE Photonics Technology Letters, 18: 5, (2006).
• 4) Chen H.-S., Yeh D.-M., Lu C.-F., Huang C.-F., Shiao W.-Y., Huang J.-J., Yang C. C. Liu I.-S. and Su W.-F. “White light generation with CdSe–ZnS nanocrystals coated on an InGaN–GaN quantum-well blue/green two-wavelength light-emitting diode”, IEEE Photonics Technology Letters, 18:13, (2006).
• 5) Yamada M., Narukawa Y. and Mukai T., “Phosphor free high-luminous-efficiency white light-emitting diodes composed of InGaN multi-quantum well”, Journal Applied Physics, 41: L246–L248, (2002).
• 6) Damilano B., Grandjean N., Pernot C. and Massies J. “Monolithic white light-emitting diodes based on InGaN/GaN multiple quantum wells”, Journal Applied Physics, 40: L918–L920, (2001).
• 7) Shei S.C., Sheu J.K., Tsai C.M., Lai W.C., Lee M. L. and Kuo C.H., “Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes”, Japanese Journal of Applied Physics, 45: 2463–2466, (2006).
• 8) Huang C.F., Lu C. F., Tang T. Y., Huang J. J. and Yang C. C., “Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells”, Applied Physics Letters, 90: 151122, (2007).
• 9) Yamada M., Narukawa Y., Tamaki H., Murazaki Y. and Mukai T.,"A methodological study of the best solution for generating white light using nitride-based light-emitting diodes", IEICE Trans. Electron. IEICE TRANSACTIONS on Electronics, E88-C: 1860, (2005).
• 10) Leszczynski M., Teisseyre H., Suski T., Grzegory I., Bockowski M., Jun J., Pakula K., Baranowski J.M., Foxon C.T. and Cheng T.S., “Lattice parameters of gallium nitride”, Applied Physics Letters, 69:73, (1996).
• 11) Cho S. I., Chang K. and Kwon M. S., “Strain analysis of a GaN epilayer grown on a c-plane sapphire substrate with different growth times”, Journal of Materials Science, 42: 3569–3572, (2007).
• 12) Harutyunyan V.S., Aivazyan A.P., Weber E.R., Kim Y., Park Y., Subramanya S.G., “High-resolution x-ray diffraction strain-stress analysis of GaN/sapphire heterostructures”, Journal of Physics D: Applied Physics, 34: A35, (2001).
• 13) Kittel C., “Introduction to solid state physics”, John Wiley & Sons, Singapore, 8, (1991).
• 14) Gil, B., “Group nitride semiconductor compounds”, Oxford University Press Inc., Oxford, 1, (1998).
• 15) Edgar J.H., Strite S., Akasaki I., Amano H. And Wetzel C., “Properties, processing and applications of gallium nitride and related semiconductors”, INSPEC, London, 381, (1999).
• 16) Kisielowski C., Kruger J., Ruvimov S., Suski T., Ager J. W., Jones E., Liliental-Weber Z., Rubin M., Weber E. R., Bremser M.D. and Davis R. F., “Strain-related phenomena in GaN thin films”, Physical review B, 54: 17745, (1996).
• 17) Kisielowski C., “Strain in GaN thin films and heterostructures”, Semiconductors and Semimetals, 57: 275-317, (1999).
• 18) Perry W. G., Zheleva T., Bremser M. D., Davis R. F., Shan W. and Song J. J. ,“Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grownon AIN/6H-SiC(0001) substrates”, Journal of Electronic Materials, 26: 224, (1997).
• 19) Skromme B. J., Zhao H., Wang D., Kong H. S., Leonard M. T., Bulman G. E. and Molnar R. J.,”Strain determination in heteroepitaxial GaN”, Applied Physics Letters, 71: 829, (1997).
• 20) Cetin S. S., Öztürk M. K., Özcelik S., Özbay E., “Strain analysis of InGaN/GaN multi quantum well LED structures”, Crystal Research and Technology, 47: 824–833, (2012).
• 21) Polian A., Grimsditch M. and Grzegory I., “Elastic constants of gallium nitride”, Journal of Applied Physics, 79: 3343, (1996).
• 22) Metzger T., Höppler R., Born E., Ambacher O., Stutzmann M., Stömmer R., Schuster M., Göbel H., Christiansen S., Albrecht M. and Strunk H.P., “Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry”, Philosophical Magazine a-Physics of Condensed Matter Structure Defects, 77: 1013, (1998).
• 23) Williamson G. K. and Hall W. H., “X-ray line broadening from filed aluminium and wolfram”, Acta Metallurgica, 1: 22, (1953).
• 24) Kars Durukan İ., Öztürk M. K., Çörekçi S., Tamer M., Bas Y., Özçelik S. and Özbay E., “Microstructural analysis with graded and non-graded ındium in ıngan solar cell”, Journal of Nanoelectronics and Optoelectronics, 12: 109–117, (2017).