Electrical Characterization of ZnO (Al) / p-Si Heterojunctions Fabricated by SolGel Method

Year 2018, Volume: 13 Issue: 2, 121 - 131, 30.11.2018

Namık Akçay

https://doi.org/10.29233/sdufeffd.462245

Abstract

In this work, the electrical properties of heterojunctions formed by coating of undoped
Zinc Oxide (ZnO) and 2% Aluminum doped zinc oxid (AZO) on p-type silicon (p-Si) were
investigated. ZnO and AZO nanoparticles were synthesized by Sol-Gel method and ZnO / p-Si,
ZnO (Al) / p-Si heterojunctions were formed by spin coating technique. After the coating, the
samples were thermally annealed at 450 oC for 30 minutes. Current-Voltage (I-V) and
Capacitance-Voltage (C-V) measurements taken at 10K-300K show that the samples exhibit
diode behavior with very low leakage current. Built-in potential (Vbi) and carrier concentrations
(Nd) of diodes were calculated from C-V measurement results. Deep level transition spectroscopy
(DLTS) technique was used to investigate trap levels around the depletion region. The presence
of electron traps in both samples was determined.

Keywords

ZnO thin film, Al doping, ZnO/p-Si heterojunction, DLTS

Sol-Jel Yöntemi ile Üretilen ZnO(Al)/p-Si Heteroekleminin Elektriksel Karakterizasyonu

Abstract

Bu çalışmada, p-tipi Silisyum
(p-Si) üzerine katkısız Çinko Oksit (ZnO) ve %2 Alüminyum katkılı çinko oksit
(ZnOAl) kaplanarak oluşturulan heteroeklemlerin elektriksel özellikleri
incelenmiştir. ZnO ve ZnOAl nanoparçacıklar Sol-Jel yöntemi ile sentezlenmiş ve
ZnO/p-Si, ZnOAl/p-Si heteroeklemleri döndürme kaplama tekniği ile
oluşturulmuştur. Kaplama sonrası örneklere 450 ^oC’de 30 dk termal
tavlama işlemi uygulanmıştır. 10K-300K aralığında alınan Akım-Voltaj (I-V) ve
Kapasite-Voltaj (C-V) ölçümleri örneklerin çok düşük sızıntı akımına sahip
diyot davranışı sergilediğini göstermektedir. C-V ölçüm sonuçlarından diyotların bariyer yüksekliği (V_bi) ve taşıyıcı
konsantrasyonları (N_d)
hesaplandı. Derin seviye
geçiş spektroskopisi (DLTS) tekniği ile arınma bölgesi civarında bulunan tuzak
seviyeleri araştırılmıştır. Her iki örnekte de elektron tuzaklarının varlığı
tespit edilmiştir.

Keywords

ZnO ince film, Al katkılama, ZnO/p-Si heteroeklemi, DLTS

References

• N. Akçay, G. Algün, N. Ü. Kılıç, S. Shawuti, and M. M. Can, “Europium dependent absorption properties of Zn1−(y+0.01)(Al0.01,Euy)O (y = 0.00, 0.01, 0.03 and 0.05) thin films grown on the soda-lime glass substrates by spin coating,” J. Mater. Sci. Mater. Electron., vol. 28, no. 5, pp. 4492–4497, 2017.
• N. Zebbar, Y. Kheireddine, K. Mokeddem, A. Hafdallah, M. Kechouane, and M. S. Aida, “Structural, optical and electrical properties of n-ZnO/p-Si heterojunction prepared by ultrasonic spray,” Mater. Sci. Semicond. Process., vol. 14, no. 3–4, pp. 229–234, 2011.
• C. H. Chu, H. W. Wu, and J. L. Huang, “AZO/Au/AZO tri-layer thin films for the very low resistivity transparent electrode applications,” Mater. Sci. Eng. B Solid-State Mater. Adv. Technol., vol. 186, no. 1, pp. 117–121, 2014.
• Y. Liu, Y. Li, and H. Zeng, “ZnO-based transparent conductive thin films: Doping, performance, and processing,” J. Nanomater., vol. 2013, no. Cvd, 2013.
• L. Zhu and W. Zeng, “Room-temperature gas sensing of ZnO-based gas sensor: A review,” Sensors Actuators, A Phys., vol. 267, pp. 242–261, 2017.
• R. Ghosh and D. Basak, “Electrical and ultraviolet photoresponse properties of quasialigned ZnO nanowires/ p-Si heterojunction,” Appl. Phys. Lett., vol. 90, no. 24, pp. 2005–2008, 2007.
• X. Zong and R. Zhu, “Zinc oxide nanorod field effect transistor for long-time cellular force measurement,” Sci. Rep., vol. 7, no. October 2016, pp. 1–8, 2017.
• G. Algün, “Humidity sensing properties of fluorine doped zinc oxide thin films,” J. Mater. Sci. Mater. Electron., vol. 29, no. 19, pp. 17039–17046, 2018.
• N. Üzar, G. Algün, N. Akçay, D. Akcan, and L. Arda, “Structural, optical, electrical and humudity sensing properties of (Y/Al) co-doped ZnO thin films,” J. Mater. Sci. Mater. Electron., vol. 28, no. 16, 2017.
• R. Pietruszka, B. S. Witkowski, E. Zielony, K. Gwozdz, E. Placzek-Popko, and M. Godlewski, “ZnO/Si heterojunction solar cell fabricated by atomic layer deposition and hydrothermal methods,” Sol. Energy, 2017.
• D. C. Look, G. M. Renlund, R. H. Burgener, and J. R. Sizelove, “As-doped p-type ZnO produced by an evaporation/sputtering process,” Appl. Phys. Lett., vol. 85, no. 22, pp. 5269–5271, 2004.
• G. Brauer, J. Kuriplach, C. C. Ling, and A. B. Djurišić, “Activities towards p-type doping of ZnO,” J. Phys. Conf. Ser., vol. 265, no. 1, 2011.
• F. Yakuphanoglu, Y. Caglar, M. Caglar, and S. Ilican, “ZnO/p-Si heterojunction photodiode by solgel deposition of nanostructure n-ZnO film on p-Si substrate,” Mater. Sci. Semicond. Process., vol. 13, no. 3, pp. 137–140, 2010.
• X. Wang et al., “ZnO thin film grown on silicon by metal-organic chemical vapor deposition,” J. Cryst. Growth, vol. 243, no. 1, pp. 13–18, 2002.
• Y. S. Ocak, “Electrical characterization of DC sputtered ZnO/p-Si heterojunction,” J. Alloys Compd., vol. 513, pp. 130–134, 2012.
• A. A. Ibrahim and A. Ashour, “ZnO/Si solar cell fabricated by spray pyrolysis technique,” J. Mater. Sci. Mater. Electron., 2006.
• K. Gwozdz et al., “Deep traps in the ZnO nanorods/Si solar cells,” J. Alloys Compd., vol. 708, pp. 247–254, 2017.
• T. Hanada, “Basic Properties of ZnO, GaN, and Related Materials,” in Oxide and Nitride Semiconductors, T. Yao and S.-K. Hong, Eds. Springer, Berlin, Heidelberg, 2009, pp. 1–19.
• W. C. Dunlap and R. L. Watters, “Direct measurement of the dielectric constants of silicon and germanium,” Phys. Rev., vol. 92, no. 6, pp. 1396–1397, 1953.
• D. V. Lang, “Deep-level transient spectroscopy: A new method to characterize traps in semiconductors,” J. Appl. Phys., vol. 45, no. 7, pp. 3023–3032, 1974.
• M. U. Shahid, K. M. Deen, A. Ahmad, M. A. Akram, M. Aslam, and W. Akhtar, “Formation of Al-doped ZnO thin films on glass by sol–gel process and characterization,” Appl. Nanosci., vol. 6, no. 2, pp. 235–241, 2016.
• C. E. Stutz, “Electrochemical Schottky characteristics of ZnO for capacitance-voltage measurements,” J. Electron. Mater., vol. 30, no. 12, pp. 2–4, 2001.
• J.-C. Lin, M.-C. Huang, T. Wang, J.-N. Wu, Y.-T. Tseng, and K.-C. Peng, “Structure and characterization of the sputtered ZnO, Al-doped ZnO, Ti-doped ZnO and Ti, Al-co-doped ZnO thin films,” Mater. Express, vol. 5, no. 2, pp. 153–158, 2015.
• A. Kaphle and P. Hari, “Characterization of Aluminum Doped Nanostructured ZnO/p-Si Heterojunctions,” Int. J. Eng. Sci., pp. 2319–1813, 2016.