On the Voltage Dependent Series Resistance, Interface Traps, and Conduction Mechanisms in the Al/(Ti-doped DLC)/p-Si/Au Schottky Barrier Diodes (SBDs)

Year 2024, Volume: 11 Issue: 1, 235 - 244, 28.03.2024

Sabreen Hameed , Öznur Berkün , Seçkin Altındal Yerişkin

https://doi.org/10.54287/gujsa.1405552

Abstract

In this study, Al-(Ti:DLC)-pSi/Au Schottky barrier diode (SBD) was manufactured instead of conventional metal / semiconductor (MS) with and without an interlayer and then several fundamental electrical-characteristics such as ideality factor (n), barrier height B series and shunt resistances (Rs, Rsh), concentration of acceptor atoms (NA), and width of depletion-layer (Wd) were derived from the forward-reverse bias current/voltage (I-V), capacitance and conductance as a function of voltage (C/G-V) data using various calculation-methods. Semi logarithmic IF-VF plot shows a linear behavior at lower-voltages and then departed from linearity as a result of the influence of series resistance/Rs and organic-interlayer. Three linear regions can be seen on the double-logarithmic IF-VF plot. with different slopes (1.28, 3.14, and 1.79) in regions with low, middle, and high forward bias, which are indicated that Ohmic-mechanism, trap-charge-limited-current (TCLC) mechanism, and space-charge-limited-current (SCLC) mechanism, respectively. Energy dependent surface states (Nss) vs (Ess-Ev) profile was also obtained from the Card-Rhoderick method by considering voltage-dependence of n and B and they were grown from the mid-gap energy up to the semiconductor's valance band (Ev). To see the impact of Rs for 1 MHz, the measured C/G-V graphs were amendment. All results are indicated that almost all electrical parameters and conduction mechanism are quite depending on Rs, Nss, and calculation method due the voltage dependent of them.

Keywords

(Ti:DLC) Interlayer Al/(Ti:DLC)/p-Si Schottky Diodes, Origin of Series Resistance and Interface States, Conduction Mechanisms, I-V, and C-V and G-V Measurements

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