A SIMPLE APPROACH FOR MODELING THE INFLUENCE OF HOT-CARRIERS ON THRESHOLD VOLTAGE OF MOS TRANSISTORS

Yıl 2001, Cilt: 1 Sayı: 2, 201 - 208, 10.11.2011

Fırat Kacar Ayten Kuntman , Hakan Kuntman

Öz

Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability

concept in modern microcircuits. High energy carriers also called hot carriers are generated in the

MOSFET by the large channel electric field near the drain region. The electric field accelarates the

carriers to effective temperatures well above the lattice temprature. These hot carriers transfer energy

to the lattice through phonon emission and break bonds at the Si/SiO2 interface. The trapping or bond

breaking creates oxide charge and interface traps that effect the channel carrier mobility and the

effective channel potential.

Interface traps and oxide charge effect transistor performance parameters such as threshold voltage

and drive currents in all operating regimes. In this paper, the influence of the hot carriers on the

threshold voltage of MOS trasnsistors is examined experimentally. Using these experimental results a

new method for representation of hot-carrier effect on the threshold voltage of MOS transistors is

proposed.

Key words: MOS transistor, Hot carriers, MOS models

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